Bump structure having a side recess and semiconductor structure including the same
A bump structure includes a first end; and a second end opposite the first end. The bump structure further includes a side connected between the first end and the second end, wherein the side comprises a recess for a reflowed solder material to fill, and the recess defines a first surface adjacent to the first end and a second surface adjacent to the second end.
1. A bump structure comprising:
a first end;
a second end opposite the first end;
a side connected between the first end and the second end, wherein the side comprises a recess, and the recess defines a first surface adjacent to the first end and a second surface adjacent to the second end; and
wherein a depth of the recess into the bump structure ranges from about 0.5 μm to about 15 μm.
2. The bump structure of claim 1 , wherein the first surface is substantially planar and the second surface is substantially planar.
3. The bump structure of claim 2 , wherein the first surface directly contacts the second surface.
4. The bump structure of claim 2 , wherein the recess further defines a third surface connecting the first surface to the second surface.
5. The bump structure of claim 4 , wherein the third surface is substantially perpendicular to at least one of the first surface or the second surface.
6. The bump structure of claim 4 , wherein the third surface is a curved surface.
7. The bump structure of claim 4 , wherein a length of the third surface is equal to or less than about 30 microns (μm).
8. The bump structure of claim 1 , wherein a shape of the first end is different from a shape of the second end.
9. The bump structure of claim 1 , wherein a maximum distance between the first surface and the second surface ranges from about 8 μm to about 15 μm.
10. The bump structure of claim 1 , further comprising:
a solder layer;
a copper post layer arranged onto the solder layer, and
an under-bump metallurgy (UBM) layer arranged onto the copper post layer, wherein the recess is arranged within sidewalls of the solder layer, the copper post layer, and the UBM layer.
11. A semiconductor structure comprising:
a plurality of bump structures configured to electrically connect to a separate die, wherein each bump structure of the plurality of bump structures comprises:
a first end;
a second end opposite the first end; and
a side connected between the first end and the second end, wherein the side comprises a recess,
wherein a recess for a first bump structure of the plurality of bump structures is oriented in a first direction, and a recess for a second bump structure of the plurality of bump structures is oriented in a second direction different from the first direction.
12. The semiconductor structure of claim 11 , wherein the first direction is toward a closest center line of the semiconductor structure with respect to the first bump structure.
13. The semiconductor structure of claim 12 , wherein the second direction is toward the closest center line of the semiconductor structure with respect to the first bump structure.
14. The semiconductor structure of claim 11 , wherein the first direction is angled with respect to the second direction.
15. The semiconductor structure of claim 11 , wherein the first direction is perpendicular with respect to the second direction.
16. The semiconductor structure of claim 11 , wherein a recess for a third bump structure of the plurality of bump structures is oriented in a third direction different from the first direction and from the second direction.
17. The semiconductor structure of claim 11 , further comprising a plurality of non-recessed bump structures configured to electrically connect to the separate die.
18. The semiconductor structure of claim 17 , wherein the first bump structure is adjacent to at least one non-recessed bump structure of the plurality of non-recessed bump structures.
19. A semiconductor structure comprising:
a plurality of bump structures configured to electrically connect to a separate die, wherein each bump structure of the plurality of bump structures comprises:
a first end;
a second end opposite the first end; and
a side connected between the first end and the second end, wherein the side comprises a recess,
wherein a first end for a first bump structure of the plurality of bump structures is oriented a first direction, and a first end for a second bump structure of the plurality of bump structures is oriented a second direction different from the first direction.
20. The semiconductor structure of claim 19 , wherein the first direction is perpendicular with respect to the second direction.