Metal-insulator-metal (MIM) capacitor structure including redistribution layer
View Patent ↗Embodiments of mechanisms for forming a semiconductor device with metal-insulator-metal (MIM) capacitor structure are provided. The MIM capacitor structure includes a substrate; and a MIM capacitor formed on the substrate. The MIM capacitor includes a bottom electrode formed over the substrate. The bottom electrode is a top metal layer. The MIM capacitor also includes an insulating layer formed on the bottom electrode; and a top electrode formed on the insulating layer.
1. A metal-insulator-metal (MIM) capacitor structure, comprising:
a substrate, wherein the substrate has a MIM region and a non-MIM region;
a MIM capacitor formed on the substrate in the MIM region, wherein the MIM capacitor comprises:
a bottom electrode formed over the substrate, wherein the bottom electrode is a first portion of a top metal layer, and the top metal layer is formed in an inter-metal dielectric (IMD) layer;
an insulating layer formed on the bottom electrode;
a top electrode formed on the insulating layer; and
a barrier layer formed over the top electrode; and
a redistribution layer (RDL) formed on a second portion of the top metal layer in the non-MIM region, wherein the RDL directly contacts both the top electrode and the second portion of the top metal layer.
2. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 1 , wherein the insulating layer is formed in a first passivation layer.
3. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 2 , further comprising:
a second passivation layer formed on the first passivation layer.
4. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 2 , wherein a portion of the top electrode extends from inside of the first passivation layer to directly over a top surface of the first passivation layer.
5. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 1 , further comprising:
a metal pad formed on a third portion of the top metal layer, wherein the metal pad is formed of a same material as the top electrode.
6. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 5 , further comprising:
an under bump metallurgy (UBM) layer formed over the metal pad; and
a conductive element formed on the UBM layer.
7. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 1 wherein the RDL is formed of a same material as the top electrode.
8. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 7 , wherein the RDL extends from above a first passivation layer to the second portion of the top metal layer.
9. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 1 , wherein the top electrode is made of copper (Cu), copper alloy, aluminum (Al), aluminum (Al) alloy, tungsten (W) or tungsten (W) alloy, or combinations thereof.
10. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 1 , wherein the insulating layer is made of silicon oxide, silicon nitride, silicon glass or combinations thereof.
11. A metal-insulator-metal (MIM) capacitor structure, comprising:
a substrate, wherein the substrate has a MIM region and a non-MIM region; and
a MIM capacitor formed on the substrate in the MIM region, wherein the MIM capacitor comprises:
a top metal layer formed over the substrate and in an inter-metal dielectric (IMD) layer, wherein a first portion of the top metal layer is used as a bottom electrode of the MIM capacitor;
a dielectric layer formed on the bottom electrode;
a redistribution layer (RDL) formed on the dielectric layer in the MIM region, wherein the RDL formed on the dielectric layer in the MIM region is used as a top electrode of the MIM capacitor; and
a barrier layer formed over the top electrode; and
the RDL formed on a second portion of the top metal layer in the non-MIM region, wherein the RDL formed on the second portion of the top metal layer in the non-MIM region directly contacts both the top electrode and the second portion of the top metal layer.
12. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 11 , wherein the dielectric layer is formed in a first passivation layer.
13. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 12 , further comprising:
a second passivation layer formed on the RDL and the first passivation layer.
14. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 11 , wherein the top metal layer is made of copper (Cu), copper alloy, aluminum (Al), aluminum (Al) alloy, tungsten (W) or tungsten (W) alloy, or combinations thereof.
15. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 11 , wherein the dielectric layer is made of silicon oxide, silicon nitride, silicon glass or combinations thereof.
16. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 11 , further comprising:
a metal pad formed on a third portion of the top metal layer, wherein the metal pad is formed of a same material as the top electrode.
17. The metal-insulator-metal (MIM) capacitor structure as claimed in claim 16 , further comprising:
an under bump metallurgy (UBM) layer formed over the metal pad; and
a conductive element formed on the UBM layer.