IP Library › Granted Patent US 9,345,142
Granted Patent B2
US 9,345,142 · App. 14/538,797 · Granted May 17, 2016

Chip embedded board and method of manufacturing the same

Inventors: Seon Hee Moon (Suwon-Si, KR); Young Do Kweon (Suwon-Si, KR); Jeong Ho Lee (Suwon-Si, KR)
Assignee: Samsung Electro-Mechanics Co., Ltd.
H05K1/185H05K3/4644H05K3/4697H01L22/34H01L23/14
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Quick Facts
Patent No.
US 9,345,142
App. No.
14/538,797
Granted
May 17, 2016
Kind
B2
Abstract

There are provided a chip embedded board and a method of manufacturing the same. The chip embedded board includes: a core substrate; a first build-up layer formed on one surface of the core substrate and having a cavity formed therein; a chip disposed in the cavity; and an insulating layer filled in the cavity in which the chip is disposed, wherein one surface of the chip is positioned in a circuit layer positioned at the outermost layer of the first build-up layer.

Claims (27)

1. A chip embedded board comprising:

a core substrate;

a first build-up layer comprising a plurality of build-up insulating layers and formed on a first surface of the core substrate;

a second build-up layer formed on a second surface of the core substrate;

a cavity penetrating through the core substrate, the first build-up layer and the second build-up layer;

a chip disposed in the cavity; and

an insulating layer filled in the cavity,

wherein:

the second build-up layer comprises a plurality of build-up insulating layers and a plurality of circuit layers,

the number of the build-up insulating layers of the first build-up layer and number of the build-up insulating layers of the second build-up layer are equal, and

an upper surface of the chip is disposed between a build-up insulating layer among the plurality of build-up insulating layers of the first build-up layer and which is positioned at an outermost layer of the first build-up layer and a circuit layer of the first build-up layer which is positioned at another outermost layer of the first build-up layer, and a lower surface of the chip is disposed between a build-up insulating layer of the second build-up layer among the plurality of build-up insulating layers of the second build-up layer and which is positioned at an outermost layer of the second build-up layer and a circuit layer among the plurality of circuit layers of the second build-up layer and which is positioned at another outermost layer of the second build-up layer.

2. The chip embedded board of claim 1 , wherein the insulating layer is formed of a photosensitive insulating material.

3. The chip embedded board of claim 1 , further comprising an adhering layer formed between the lower surface of the chip and the cavity.

4. The chip embedded board of claim 3 , wherein the adhering layer is further formed between a side surface of the chip and the cavity, in which the side surface comprises a surface perpendicular to the upper surface and the lower surface of the chip.

5. A method of manufacturing a chip embedded board, comprising:

forming a first build-up layer, comprising a plurality of build-up insulating layers, on a first surface of a core substrate;

forming a second build-up layer on a second surface of the core substrate;

forming a cavity penetrating through the core substrate, the first build-up layer and the second build-up layer;

disposing a chip in the cavity; and

forming an insulating layer in the cavity,

wherein:

the first build-up layer comprises a plurality of build-up insulating layers and a plurality of circuit layers,

the second build-up layer comprises a plurality of build-up insulating layers and a plurality of circuit layers,

the number of build-up insulating layers of the first build-up layer and the number of build-up insulating layers of the second build-up layer are equal, and

an upper surface of the chip is disposed between a build-up insulating layer among the plurality of build-up insulating layers of the first build-up layer and which is positioned at an outermost layer of the first build-up layer and a circuit layer of the first build-up layer which is positioned at another outermost layer of the first build-up layer, and a lower surface of the chip is disposed between a build-up insulating layer of the second build-up layer among the plurality of build-up insulating layers of the second build-up layer and which is positioned at an outermost layer of the second build-up layer and a circuit layer among the plurality of circuit layers of the second build-up layer and which is positioned at another outermost layer of the second build-up layer.

6. The method of manufacturing a chip embedded board of claim 5 , wherein in the forming of the insulating layer, the insulating layer is formed of a photosensitive insulating material.

7. The method of manufacturing a chip embedded board of claim 5 , further comprising, after the forming of the first build-up layer, forming an adhering layer in the cavity.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 12, 2014
From: MOON, SEON HEE; KWEON, YOUNG DO; LEE, JEONG HO
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 034154/0366 →
Priority Claims (2)
KR 10-2013-0142235 · Nov 21, 2013 · national
KR 10-2014-0119243 · Sep 5, 2014 · national
Continuity (1)
Related Publication 20150138741A1 · May 21, 2015