Singulation method for semiconductor package with plating on side of connectors
A method of singulating semiconductor packages, the method comprising: providing a plurality of semiconductor dies coupled to a single common leadframe, wherein a molding compound at least partially encases the semiconductor dies and the leadframe; singulating the plurality of semiconductor dies, wherein the leadframe is at least partially cut between adjacent semiconductor dies, thereby forming exposed side surfaces on leads of the leadframe; and plating the exposed side surfaces of the leads with a plating material, wherein the plating material is a different material than the leads. In some embodiments, singulating the plurality of semiconductor dies comprises performing a full cut of the leadframe. In some embodiments, singulating the plurality of semiconductor dies comprises performing separate partial cuts of the leadframe.
1. A leadframe strip comprising a plurality of non-singulated encapsulated semiconductor devices, wherein each of the semiconductor devices comprises:
a portion of the leadframe strip having a die attach pad and a plurality of leads;
a semiconductor die coupled to the die attach pad of the portion of the leadframe strip;
a mold compound at least partially encasing the portion of the leadframe strip and the semiconductor die; and
at least one partial cut that extends from the leadframe strip towards the mold compound, wherein the at least one partial cut partially separates a corresponding semiconductor device of the semiconductor devices from another semiconductor device of the semiconductor devices, and wherein side surfaces of the corresponding and the another semiconductor devices that are located at the at least one partial cut are plated with a plating material, wherein the plated side surfaces include side surfaces of the leads between the corresponding and the another semiconductor devices, the plating material being a different material than the leads.
2. The leadframe strip of claim 1 , wherein the leads are copper.
3. The leadframe strip of claim 1 , wherein the plating material is a metallic material.
4. The leadframe strip of claim 3 , wherein the plating material is tin, silver, gold, nickel-gold, nickel-palladium, or nickel-palladium-gold.
5. The leadframe strip of claim 1 , wherein the mold compound comprises a top surface, a bottom surface, and side surfaces between the top surface and the bottom surface, wherein the side surfaces comprises a step after full singulation separating the corresponding semiconductor device from the another semiconductor device.
6. The leadframe strip of claim 5 , wherein the step defines a first portion of the side surfaces and a second portion of the side surfaces.
7. The leadframe strip of claim 6 , wherein the first portion of the side surfaces and the second portion of the side surfaces are substantially equal in height.
8. The leadframe strip of claim 6 , wherein the first portion of the side surfaces and the second portion of the side surfaces are different in height.
9. The leadframe strip of claim 6 , wherein the plurality of leads is in the wider of the first portion of the side surfaces and the second portion of the side surfaces.
10. The leadframe strip of claim 1 , wherein the mold compound comprises a top surface, a bottom surface, and side surfaces between the top surface and the bottom surface, wherein the side surfaces comprises a beveled portion after full singulation separating the corresponding semiconductor device from the another semiconductor device.
11. The leadframe strip of claim 1 , wherein the mold compound comprises a top surface, a bottom surface, and side surfaces between the top surface and the bottom surface, wherein the side surfaces comprise a beveled portion and a non-beveled portion after full singulation separating the corresponding semiconductor device from the another semiconductor device.
12. The leadframe strip of claim 11 , wherein the plurality of leads is in the beveled portion.
13. The leadframe strip of claim 11 , wherein the plurality of leads is in the non-beveled portion.
14. The leadframe strip of claim 11 , wherein the beveled portion is between a first section of the non-beveled portion and a second section of the non-beveled portion.
15. The leadframe strip of claim 14 , wherein the plurality of leads is in the wider of the first section of the non-beveled portion and the second section of the non-beveled portion.
16. The leadframe strip of claim 1 , wherein the semiconductor die is wire bonded to the leads of the leadframe.
17. The leadframe strip of claim 1 , wherein the at least one partial cut extends beyond a height of the side surfaces of the leads.
18. The leadframe strip of claim 17 , wherein the side surfaces of the leads are exposed starting at corners of the corresponding and the another non-singulated semiconductor devices.
19. A leadframe strip comprising a plurality of non-singulated encapsulated semiconductor devices, wherein each of the semiconductor devices comprises:
a portion of the leadframe strip having a die attach pad and a plurality of leads;
a semiconductor die coupled to the die attach pad of the portion of the leadframe strip;
a mold compound at least partially encasing the portion of the leadframe strip and the semiconductor die; and
at least one partial cut extending from the leadframe strip towards the mold compound, wherein the at least one partial cut electrically isolates a corresponding semiconductor device of the semiconductor devices from another semiconductor device of the semiconductor devices, and wherein side surfaces of the corresponding and the another semiconductor devices that are located at the at least one partial cut are plated with a plating material, wherein the plated side surfaces include side surfaces of the leads between the corresponding and the another semiconductor devices, the plating material being a different material than the leads, wherein the at least one partial cut is differently sized than at least one subsequent cut configured to singulate the corresponding semiconductor device from the another semiconductor device such that, when singulated from the another semiconductor device, the size of the area of a top surface of corresponding semiconductor device is different from the size of the area of a bottom surface of the corresponding semiconductor device.