Power MOS device structure

1. A power MOS device structure, comprising:

a semiconductor substrate having a plurality of basic units of lateral double-diffused metal-oxide semiconductor (LDMOS) formed thereon;

a first metal layer disposed above the semiconductor substrate;

a second metal layer disposed above the first metal layer and having a plurality of bonding pads; and

a plurality of metal plugs disposed between and electrically connecting the first metal layer and the second metal layer,

wherein:

the basic units of LDMOS are coupled in parallel and electrically coupled to the bonding pads to couple a gate terminal, a source terminal, a drain terminal and a substrate terminal of each of the basic units of LDMOS to the bonding pads,

at least one of the basic units of LDMOS is disposed directly below a respective bonding pad of the plurality of bonding pads, and

each of the gate terminal, the source terminal, the drain terminal and the substrate terminal of the at least one of the basic units of LDMOS disposed directly below the respective bonding pad is firstly coupled to a region outside a perimeter of the respective bonding pad via the first metal layer, and then subsequently coupled to at least one of the bonding pads via at least one of the plurality of metal plugs and the second metal layer.

2. The power MOS device structure of claim 1 , further comprising a first metal layer disposed between the plurality of basic units of LDMOS and the plurality of bonding pads, wherein the basic units of LDMOS, the first metal layer and the bonding pads are electrically coupled by metal plugs.

3. The power MOS device structure of claim 1 , wherein the plurality of bonding pads comprises a gate bonding pad, a source bonding pad, a drain bonding pad, and a substrate bonding pad that are coupled to the gate terminal, source terminal, drain terminal, and source terminal of each of the plurality of basic units of LDMOS which are coupled in parallel.

4. The power MOS device structure of claim 1 , wherein the plurality of bonding pads comprises a single layer of metal with a thickness of 3.5 um to 4.5 um and a width of 1.5 um to 2.5 um, the single layer of metal comprising aluminum-copper metal or aluminum-silicon-copper metal.

5. The power MOS device structure of claim 4 , wherein the plurality of bonding pads further comprises a barrier layer below the single layer of metal.

6. The power MOS device structure of claim 5 , wherein the barrier layer comprises a titanium layer and a titanium nitride layer, a thickness of the titanium layer being 300 Ř600 Å and a thickness of the titanium nitride layer being 300 Ř800 Å.

7. The power MOS device structure of claim 4 , wherein the plurality of bonding pads further comprise an anti-reflection layer above the single layer of metal.

8. The power MOS device structure of claim 7 , wherein the anti-reflection layer comprises a titanium layer and a titanium nitride layer, a thickness of the titanium layer being 100 Å-400 Å and a thickness of the titanium nitride layer being 250 Ř400 Å.

9. The power MOS device structure of claim 1 , further comprising a passivation layer over a surface of the power MOS device structure with one or more openings exposing the plurality of bonding pads.

10. The power MOS device structure of claim 9 , wherein the passivation layer comprises a layer of plasma-rich silicon oxide film having a thickness of 1 kÅ to 2 kÅ, a layer of high-density plasma silicon dioxide film having a thickness of 10 kÅ to 20 kÅ and disposed over the layer of plasma-rich silicon oxide film, and a layer of plasma silicon nitride film having a thickness of 7 kÅ to 11 kÅ and disposed over the layer of high-density plasma silicon dioxide film.