Semiconductor devices having bridge layer and methods of manufacturing the same
A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.
1. A semiconductor device, comprising:
a substrate;
a first active fin on the substrate;
a second active fin on the substrate;
a first epitaxial layer on the first active fin;
a second epitaxial layer on the second active fin;
a bridge layer connecting the first epitaxial layer to the second epitaxial layer; and
a third epitaxial layer on the bridge layer,
wherein the bridge layer includes a different germanium (Ge) concentration from those of the first through the third epitaxial layers.
2. The semiconductor device of claim 1 , wherein each of the first through the third epitaxial layers includes a flat upper surface, respectively.
3. The semiconductor device of claim 2 , wherein the flat upper surfaces of the first through the third epitaxial layers define substantially the same plane.
4. The semiconductor device of claim 1 , wherein the third epitaxial layer is between the first epitaxial layer and the second epitaxial layer.
5. The semiconductor device of claim 1 , wherein the bridge layer comprises boron (B); and
wherein the first through the third epitaxial layers comprise germanium (Ge).
6. The semiconductor device of claim 1 , further comprising a capping layer between the first epitaxial layer and the third epitaxial layer and between the second epitaxial layer and the third epitaxial layer.
7. The semiconductor device of claim 6 , wherein the bridge layer and the capping layer comprise substantially the same material.
8. A semiconductor device, comprising;
a substrate;
a plurality of active fins on the substrate;
a bridge layer connecting the plurality of active fins to each other;
an epitaxial layer on the bridge layer; and
a contact on the plurality of active fins and on the epitaxial layer,
wherein the epitaxial layer is between ones of the plurality of active fins, and
wherein the contact is connected to the plurality of active fins and to the epitaxial layer, simultaneously.
9. The semiconductor device of claim 8 , wherein each of the plurality of active fins and the epitaxial layer has a flat upper surface, respectively.
10. The semiconductor device of claim 8 , wherein the plurality of active fins and the epitaxial layer comprise substantially the same material.
11. The semiconductor device of claim 8 , further comprising a capping layer between ones of the plurality of active fins and the epitaxial layer.
12. The semiconductor device of claim 11 , wherein the bridge layer and the capping layer comprise substantially the same material.
13. A semiconductor device, comprising:
a first active fin on a substrate;
a second active fin on the substrate, the second active fin being spaced apart from and substantially parallel to the first active fin;
a first epitaxial layer on the first active fin;
a second epitaxial layer on the second active fin; and
a bridge layer connecting the first epitaxial layer to the second epitaxial layer,
wherein the bilayer is spaced apart from an upper surface of the substrate.
14. The semiconductor device of claim 13 , further comprising a third epitaxial layer on the bridge layer,
wherein each of the first through the third epitaxial layers includes a flat upper surface, respectively, and
wherein the flat upper surfaces of the first through the third epitaxial layers define substantially a same plane.
15. The semiconductor device of claim 14 , further comprising a capping layer between the first epitaxial layer and the third epitaxial layer and between the second epitaxial layer and the third epitaxial layer.
16. The semiconductor device of claim 15 , wherein the bridge layer and the capping layer comprise substantially a same material.
17. The semiconductor device of claim 13 , wherein the bridge layer comprises Boron (B) and includes a first germanium (Ge) concentration, and
wherein the first through the third epitaxial layers include a second germanium concentration that is different from the first germanium concentration.