IP Library Granted Patent US 9,373,666
Granted Patent B2
US 9,373,666 · App. 13/034,776 · Granted Jun 21, 2016

System and method of forming semiconductor devices

Inventors: Stephen R. Forrest (Ann Arbor, MI); Xin Xu (Ann Arbor, MI); Christopher Kyle Renshaw (Ann Arbor, MI)
Assignee: The Regents of the University of Michigan
H01L27/307H05K13/046H01L27/14609H01L27/14692H01L27/3253H01L51/0022H01L51/0097H01L2251/5338Y10T29/4913
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Quick Facts
Patent No.
US 9,373,666
App. No.
13/034,776
Granted
Jun 21, 2016
Kind
B2
Abstract

Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.

Claims (4)

1. An electrical circuit device comprising: a first circuit layer including a plurality of first contacts; a pre-formed layer including one or more semiconductor devices, the one or more semiconductor devices including a plurality of second contacts, wherein, the plurality of second contacts are directly bonded to the plurality of first contacts via a cold welded bond, wherein the first circuit layer is disposed on a non-developable surface, and a circuit sublayer under the first circuit layer and a photodiode material disposed between the circuit sub layer and the first circuit layer.

2. An electrical circuit device comprising: a first circuit layer including a plurality of first contacts;

a pre-formed layer including one or more semiconductor devices, the one or more semiconductor devices including a plurality of second contacts,

wherein, the plurality of second contacts are directly bonded to the plurality of first contacts via a cold welded bond, wherein the first circuit layer is disposed on a non-developable surface, wherein the one or more semiconductor devices include an array of thin film transistors and the plurality of first contacts are connected to an array of photodiodes.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2011
From: FORREST, STEPHEN R.; XU, XIN; RENSHAW, CHRISTOPHER KYLE
To: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
Reel/Frame 026548/0949 →
Continuity (1)
Related Publication 20120218719A1 · Aug 30, 2012