Semiconductor apparatus, electronic device, and method of manufacturing semiconductor apparatus
A semiconductor apparatus, electronic device, and method of manufacturing the semiconductor apparatus are disclosed. In one example, the semiconductor apparatus comprises a first semiconductor part that includes a first wiring, and a second semiconductor part that is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring. A metallic oxide is formed in at least one of the first wiring and the second wiring.
1. A semiconductor apparatus comprising:
a first semiconductor part including a first wiring;
a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and
a metallic oxide formed in at least one of the first wiring and the second wiring.
2. The semiconductor apparatus according to claim 1 , wherein a formation energy provided for formation of the metallic oxide through a reaction between a metallic material to be oxidized and oxygen is lower than an energy of formation necessary for formation of water through a reaction between hydrogen and oxygen.
3. The semiconductor apparatus according to claim 2 , wherein the metallic material is at least one metallic material selected from the group including Fe, Mn, V, Cr, Mg, Si, Ce, Ti and Al.
4. The semiconductor apparatus according to claim 1 , wherein the first wiring and the second wiring are each a Cu wiring.
5. The semiconductor apparatus according to claim 1 , further comprising
an oxygen gettering layer which is formed in contact with at least one of the first wiring and the second wiring and which contains the metallic material.
6. The semiconductor apparatus according to claim 5 , wherein the oxygen gettering layer is provided at a joint interface between the first wiring and the second wiring.
7. An electronic device comprising:
a signal processing circuit configured to process an output signal from a solid-state imaging apparatus, the solid state imaging apparatus comprising:
a first semiconductor part including a first wiring;
a second semiconductor part which is adhered to the first semiconductor part and which includes a second wiring electrically connected to the first wiring; and
a metallic oxide formed in at least one of the first wiring and the second wiring.
8. The electronic device according to claim 7 , wherein energy of formation provided for formation of the metallic oxide through a reaction between a metallic material to be oxidized and oxygen is lower than an energy of formation necessary for formation of water through a reaction between hydrogen and oxygen.
9. The electronic device according to claim 8 , wherein the metallic material is at least one metallic material selected from the group including Fe, Mn, V, Cr, Mg, Si, Ce, Ti and Al.
10. The electronic device according to claim 7 , wherein the first wiring and the second wiring are each a Cu wiring.
11. The electronic device according to claim 7 , further comprising:
an oxygen gettering layer which is formed in contact with at least one of the first wiring and the second wiring and which contains the metallic material.
12. The electronic device according to claim 11 , wherein the oxygen gettering layer is provided at a joint interface between the first wiring and the second wiring.
13. A method of manufacturing a semiconductor apparatus, the method comprising:
forming a first semiconductor part including a first wiring;
adhering a second semiconductor part to the first semiconductor part, the second semiconductor part including a second wiring electrically connected to the first wiring; and
forming a metallic oxide in at least one of the first wiring and the second wiring.
14. The method according to claim 13 , wherein a formation energy provided for formation of the metallic oxide through a reaction between a metallic material to be oxidized and oxygen is lower than an energy of formation necessary for formation of water through a reaction between hydrogen and oxygen.
15. The method according to claim 14 , wherein the metallic material is at least one metallic material selected from the group including Fe, Mn, V, Cr, Mg, Si, Ce, Ti and Al.
16. The method according to claim 13 , wherein the first wiring and the second wiring are each a Cu wiring.
17. The method according to claim 13 , further comprising:
an oxygen gettering layer which is formed in contact with at least one of the first wiring and the second wiring and which contains the metallic material.
18. The method according to claim 17 , wherein the oxygen gettering layer is provided at a joint interface between the first wiring and the second wiring.