Discrete three-dimensional memory
The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least an off-die peripheral-circuit component of the 3D-M arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
1. A discrete three-dimensional memory (3D-M), comprising:
a 3D-array die comprising at least a 3D-M array, wherein said 3D-M array comprises a plurality of vertically stacked memory levels;
a peripheral-circuit die comprising at least an off-die peripheral-circuit component of said 3D-M array, wherein said off-die peripheral-circuit component is absent from said 3D-array die;
means for coupling said 3D-array die and said peripheral-circuit die;
wherein the number of address-line levels in said 3D-array die is at least twice as much as the number of interconnect levels in said peripheral-circuit die; and, said 3D-array die and said peripheral-circuit die are separate dice.
2. The memory according to claim 1 , wherein said 3D-M is a three-dimensional read-only memory (3D-ROM), or a three-dimensional random-access memory (3D-RAM).
3. The memory according to claim 1 , wherein said 3D-array die and said peripheral-circuit die are located in a memory package, a memory module, a memory card, or a solid-state drive.
4. The memory according to claim 1 , further comprising another 3D-array die including at least another 3D-M array, wherein said peripheral-circuit die comprises at least another portion of another off-die peripheral-circuit component for said another 3D-array die.
5. The memory according to claim 1 , wherein said off-die peripheral-circuit component is a read-voltage generator and/or a write-voltage generator.
6. The memory according to claim 1 , wherein said off-die peripheral-circuit component is an address translator and/or a data translator.
7. A discrete three-dimensional memory (3D-M), comprising:
a 3D-array die comprising at least a 3D-M array, wherein said 3D-M array comprises a plurality of vertically stacked memory levels;
a peripheral-circuit die comprising at least an off-die peripheral-circuit component of said 3D-M array, wherein said off-die peripheral-circuit component is absent from said 3D-array die;
means for coupling said 3D-array die and said peripheral-circuit die;
wherein the number of interconnect levels in said peripheral-circuit die is more than the number of interconnect levels in said 3D-array die, but substantially less than the number of address-line levels in said 3D-array die; and, said 3D-array die and said peripheral-circuit die are separate dice.
8. The memory according to claim 7 , wherein said 3D-M is a three-dimensional read-only memory (3D-ROM), or a three-dimensional random-access memory (3D-RAM).
9. The memory according to claim 7 , wherein said 3D-array die and said peripheral-circuit die are located in a memory package, a memory module, a memory card, or a solid-state drive.
10. The memory according to claim 7 , further comprising another 3D-array die including at least another 3D-M array, wherein said peripheral-circuit die comprises at least another portion of another off-die peripheral-circuit component for said another 3D-array die.
11. The memory according to claim 7 , wherein said off-die peripheral-circuit component is a read-voltage generator and/or a write-voltage generator.
12. The memory according to claim 7 , wherein said off-die peripheral-circuit component is an address translator and/or a data translator.