Semiconductor package structure and manufacturing method thereof
A semiconductor package structure includes a first semiconductor substrate including a conductive pad; and a conductive pillar on the conductive pad and disposed between the first semiconductor substrate and a second semiconductor substrate. The conductive pad is coupled with a circuitry of the first semiconductor substrate. The conductive pillar extends along a longitudinal axis and toward the second semiconductor substrate. The conductive pillar includes a sidewall with a rough surface notching toward the longitudinal axis.
1. A semiconductor package structure, comprising:
a first semiconductor substrate comprising a conductive pad, the conductive pad comprises a plurality of recesses,
wherein the conductive pad is coupled with a circuitry of the first semiconductor substrate;
a conductive pillar on the conductive pad and disposed between the first semiconductor substrate and a second semiconductor substrate, wherein the conductive pillar: extends along a longitudinal axis and toward the second semiconductor substrate, and includes a sidewall with a rough surface notching toward the longitudinal axis, and wherein the rough surface comprises a width greater than about 2 μm, and
wherein a bottom surface of the conductive pillar interfaces with the plurality of recesses of the conductive pad.
2. The semiconductor package structure of claim 1 , wherein the width of the rough surface is ranged from about 2 μm to 3.5 μm.
3. The semiconductor package structure of claim 1 , wherein the sidewall comprises a plurality of protruded portions with a rectangular shape protruding away from the longitudinal axis.
4. The semiconductor package structure of claim 1 , wherein the sidewall comprises a plurality of protruded portions with a sawtooth shape protruding away from the longitudinal axis.
5. The semiconductor package structure of claim 1 , wherein the sidewall comprises a plurality of protruded portions with a curved shape protruding away from the longitudinal axis.
6. The semiconductor package structure of claim 1 , wherein the conductive pad comprises a rough surface with wavy curves, and a bottom surface of the conductive pillar interfaces with the rough surface.
7. The semiconductor package structure of claim 1 , further comprising:
an under bump metallization (UBM) between the conductive pillar and the conductive pad, wherein the UBM comprises a rough surface with a plurality of recesses facing the conductive pillar.
8. The semiconductor package structure of claim 1 , further comprising:
a polymeric layer on the first semiconductor substrate, wherein the polymeric layer exposes a portion of the conductive pad, thus allowing a portion of the polymeric layer to remain on the conductive pad; and
an under bump metallization (UBM) between the conductive pillar and the conductive pad, wherein the UBM connects to the conductive pad and interfaces the portion of the polymeric layer on the conductive pad.
9. The semiconductor package structure of claim 1 , wherein the first semiconductor substrate comprises a conductive route underneath the conductive pad and is coupled with the circuitry, and the conductive pad is conformal to an uneven surface resulting from the conductive route.
10. The semiconductor package structure of claim 1 , further comprising:
an underfill material between the first and second semiconductor substrates, wherein the underfill material surrounds the sidewall and interfaces the rough surface.
11. A semiconductor package structure, comprising:
a first semiconductor substrate comprising a conductive pad, wherein the conductive pad is coupled with a circuitry of the first semiconductor substrate;
a passivation layer on the first semiconductor substrate, wherein the passivation layer exposes a plurality portion of the conductive pad;
a polymeric layer over the first semiconductor substrate, wherein the polymeric layer comprises a layout exposing the portion of the conductive pad and plurality portions of the passivation layer;
an interconnector connected to the conductive pad, wherein the interconnector contacts the polymeric layer and the plurality portions of the passivation layer; and
a conductive pillar on the interconnector and disposed over the portion of the passivation layer , wherein the conductive pillar is disposed between the first semiconductor substrate and a second semiconductor substrate , and extends along a longitudinal axis and toward the second semiconductor substrate, and includes a sidewall with a rough surface notching toward the longitudinal axis,
wherein the interconnector comprises an uneven surface interfacing the conductive pillar,
wherein the exposure of the plurality portions of the passivation layer is underneath the conductive pillar.
12. The semiconductor package structure of claim 11 , wherein the rough surface includes a roughness (Ra) greater than about 2 μm.