Ion beam generator and ion beam plasma processing apparatus
The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.
1. An ion beam generator comprising:
a chamber;
a unit configured to generate plasma in the chamber;
an extraction unit provided opposed to a predetermined wall of the chamber, and configured to extract ions from the plasma;
a member configured to adjust plasma density in the chamber, and be movable in the chamber in a first direction from the wall toward the extraction unit and in a second direction from the extraction unit toward the wall;
a second member provided adjacent to the member and configured to adjust the plasma density in the chamber, and be movable in the chamber in the first direction and the second direction independently of the member;
a seal member configured to seal a gap between the wall and a sidewall of the member, and having a slidable relationship with the member; and
a shield configured to at least partially cover portions of the sidewall of the member and the seal member which slide over each other with a movement of the member, and having at least a portion extending from the wall toward the extraction unit,
wherein the member is a cylindrical member,
wherein the second member is an annular member provided surrounding the cylindrical member, and
wherein the member and the second member are provided coaxially with each other.
2. The ion beam generator according to claim 1 ,
wherein an electromagnet is provided inside each of the member and the second member, and
wherein a direction of an electric current flowing in the electromagnet provided inside the member and a direction of an electric current flowing in the electromagnet provided inside the second member are set opposite to each other.
3. The ion beam generator according to claim 1 ,
wherein the member includes the sidewall and a bottom surface, and
wherein part of the bottom surface juts out from the sidewall.
4. The ion beam generator according to claim 3 , further comprising a magnetic field applying unit provided inside the member, and configured to form a cusp magnetic field on a sidewall side and a bottom surface side of the member.
5. An ion beam plasma processing apparatus comprising the ion beam generator according to claim 1 .
6. An ion beam generator comprising:
a chamber;
a unit configured to generate plasma in the chamber;
an extraction unit provided opposed to a predetermined wall of the chamber, and configured to extract ions from the plasma;
a member configured to adjust plasma density in the chamber, and be movable in the chamber in a first direction from the wall toward the extraction unit and in a second direction from the extraction unit toward the wall;
a second member provided adjacent to the member and configured to adjust the plasma density in the chamber, and be movable in the chamber in the first direction and the second direction independently of the member; and
an expandable and contractible member configured to seal a gap between the wall and a sidewall of the member, and be expandable and contractible in the first and second directions,
wherein the member is a cylindrical member,
wherein the second member is an annular member provided surrounding the cylindrical member, and
wherein the member and the second member are provided coaxially with each other.