Semiconductor device and manufacturing method of the same
Disclosed herein is a semiconductor device including: a substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer; a large-diameter concave portion having, on a main side of a substrate, an opening sized to overlap the first and second conductive layers, with the first conductive layer exposed in part of the bottom of the large-diameter concave portion; a small-diameter concave portion extended from the large-diameter concave portion and formed by digging into the bottom of the large-diameter concave portion, with the second conductive layer exposed at the bottom of the small-diameter concave portion; and a conductive member provided in a connection hole made up of the large- and small-diameter concave portions to connect the first and second conductive layers.
1. A semiconductor device, comprising:
a bonded substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the bonded substrate includes a first substrate including the first conductive layer and a second substrate including the second conductive layer;
an insulating film;
a large-diameter concave portion having, on a main side of the bonded substrate, an opening sized to overlap at least a part of an interconnect of the first conductive layer and at least a part of an interconnect of the second conductive layer in a plane section of the bonded substrate, wherein the large-diameter concave portion includes a first step-like portion and a second step-like portion;
a small-diameter concave portion extended from the large-diameter concave portion;
a conductive member provided in a connection hole made up of the large and small-diameter concave portions, wherein the first step-like portion is electrically connected to at least a portion of the first conductive layer and the second step-like portion is connected solely to a portion of the insulating film, and wherein the small-diameter concave portion is electrically connected to the second conductive layer.
2. The semiconductor device of claim 1 , wherein the conductive member connects the interconnect of the first conductive layer to the interconnect of the second conductive layer.
3. The semiconductor device of claim 1 , wherein the large-diameter concave portion extends from the main side of the bonded substrate to the first conductive layer.
4. The semiconductor device of claim 3 , wherein the small-diameter concave portion extends from the large-diameter concave portion to the second conductive layer.
5. The semiconductor device of claim 1 , further comprising:
a joint section, wherein the first substrate is bonded to the second substrate at the joint section.
6. The semiconductor device of claim 5 , wherein the first substrate is bonded to the second substrate by an adhesive.
7. The semiconductor device of claim 1 ,
wherein the conductive member is in contact with at least a portion of the insulating film.
8. The semiconductor device of claim 1 , wherein the small-diameter concave portion is not concentric with the large-diameter concave portion.
9. The semiconductor device of claim 1 , wherein the conductive member is a conductive film.
10. The semiconductor device of claim 1 , wherein the insulating film is a first interlayer insulating film, wherein the first conductive layer is formed in the first interlayer insulating film, and wherein a portion of the small-diameter concave portion is formed at least partially in the first interlayer insulating film.
11. A semiconductor device, comprising:
a bonded substrate having a first conductive layer and a second conductive layer arranged deeper than the first conductive layer, wherein the bonded substrate includes a first substrate including the first conductive layer and a second substrate including the second conductive layer;
a large-diameter concave portion having, on a main side of the bonded substrate, an opening sized to overlap at least a part of an interconnect of the first conductive layer and at least a part of an interconnect of the second conductive layer in a plane section of the bonded substrate;
a small-diameter concave portion extended from the large-diameter concave portion;
a conductive member provided in a connection hole made up of the large and small-diameter concave portions, wherein the first conductive layer is formed in a first interlayer insulating film, and wherein a portion of the small-diameter concave portion formed in the first interlayer insulating film is formed only in the first interlayer insulating film.
12. A semiconductor device, comprising:
a first substrate, including:
a first semiconductor, the first semiconductor having a first surface and a second surface opposite the first surface; and
a first interconnection layer, wherein the first interconnection layer is formed on the second surface of the first semiconductor and includes at least a first interconnect and an insulating film;
a second substrate, including:
a second semiconductor, the second semiconductor having a first surface and a second surface opposite the first surface; and
a second interconnection layer, wherein the second interconnection layer is formed on the first surface of the second semiconductor and includes at least a second interconnect;
a joint section, wherein the first interconnection layer of the first substrate is joined to the second interconnection layer of the second substrate at the joint section;
a connection hole, including:
a large diameter concave portion, wherein the large diameter concave portion extends from the first surface of the first semiconductor layer to the first interconnection layer, wherein the large-diameter concave portion includes a first step-like portion and a second step-like portion; and
a small diameter concave portion, wherein the small diameter concave portion extends from the first interconnection layer to the second interconnection layer; and
a conductive member, wherein the conductive member is provided in the connection hole, wherein the conductive member connects the first interconnection layer to the second interconnection layer, wherein the first step-like portion is electrically connected to at least a portion of the first interconnection layer and the second step-like portion is connected solely to a portion of the insulating film, and wherein the small-diameter concave portion is electrically connected to the second interconnection layer.
13. The semiconductor device of claim 12 , wherein the conductive member connects an interconnect of the first interconnection layer to an interconnect of the second interconnection layer.
14. The semiconductor device of claim 12 , wherein the first substrate is bonded to the second substrate at the joint section.
15. The semiconductor device of claim 14 , wherein the first substrate is bonded to the second substrate by an adhesive.
16. The semiconductor device of claim 12 , further comprising:
an insulating film, wherein the conductive member is in in contact with at least a portion of the insulating film.
17. The semiconductor device of claim 12 , wherein the small-diameter concave portion is not concentric with the large-diameter concave portion.
18. The semiconductor device of claim 12 , wherein the conductive member is a conductive film.
19. The semiconductor device of claim 12 , wherein the insulating film is a first interlayer insulating film, and wherein a portion of the small-diameter concave portion formed in the first interconnection layer is formed at least partially in the first interlayer insulating film.
20. The semiconductor device of claim 12 , wherein the insulating film is a first interlayer insulating film, and wherein a portion of the small-diameter concave portion formed in the first interconnection layer is formed only in the first interlayer insulating film.