Temperature control method for substrate heat treatment apparatus, semiconductor device manufacturing method, temperature control program for substrate heat treatment apparatus, and recording medium
The present invention provides a temperature control method for a substrate heat treatment apparatus that achieves high throughput while securing stability in rapid heating where a large-diameter silicon carbide (SiC) substrate having impurity ions implanted thereinto is subjected to an activation annealing treatment. A temperature control method for a substrate heat treatment apparatus ( 1 ) that includes a heating element includes: increasing the treatment temperature; continuing the temperature increase by reducing the value of power in a stepwise manner after the treatment temperature reaches a preset temperature (T 1 ) before reaching the annealing temperature, the power being applied to heat the heating element; and maintaining the treatment temperature at a fixed value until an annealing treatment is completed after the treatment temperature reaches the annealing temperature (TA).
1. A computer-readable recording medium on which a temperature control program is recorded,
wherein the temperature control program is for a substrate heat treatment apparatus that includes a conductive heating container in an evacuable treatment chamber, and subjects a substrate to a heat treatment with heat of the heating container, a filament being incorporated into the heating container, thermal electrons generated from the filament being accelerated by an accelerating voltage applied between the filament and the heating container from an accelerating power source, the heating container being heated by causing the accelerated thermal electrons to collide with the heating container, the program causing a control apparatus of the substrate heat treatment apparatus to:
increase a treatment temperature while controlling an emission current so as to be at a fixed value;
continue the treatment temperature increase while reducing the emission current in a stepwise manner, after the treatment temperature reaches a preset temperature, before reaching an annealing temperature; and
maintain the treatment temperature at a fixed value while controlling the emission current until an annealing treatment is completed, after the treatment temperature reaches the annealing temperature.
2. The computer-readable recording medium according to claim 1 , wherein the treatment temperature is increased while the emission current is maintained at a fixed value.
3. The computer-readable recording medium according to claim 1 , wherein the treatment temperature is maintained at the fixed value, while the emission current is controlled, at a point when the treatment temperature reaches the annealing temperature.
4. The computer-readable recording medium according to claim 1 , wherein, when the annealing temperature is 1500 to 2000 degrees centigrade, the preset temperature is set at a temperature that is lower than the annealing temperature by 40 to 100 degrees centigrade.