Scanner overlay correction system and method

1. A method of processing first and second semiconductor wafers, each having a first layer thereon and a second layer over the first layer, the method comprising:

performing a first lithographic process on the first layer over the first semiconductor wafer using a first inter-field correction and a first intra-field correction;

determining an overlay error of the first lithographic process;

computing a second inter-field correction and a second intra-field correction based on the first inter-field correction, the first intra-field correction, and the measured overlay error;

performing a second lithographic process on the second layer over the second semiconductor wafer, based on the second inter-field correction and the second intra-field correction.

2. The method of claim 1 , further comprising

computing a third inter-field correction and a third intra-field correction based on the first and second inter-field corrections and the first and second intra-field corrections; and

performing a third lithographic process on a second layer over a first layer over a third semiconductor wafer.

3. The method of claim 2 , wherein the third intra-field correction is computed using exponential weighted moving average of the first and second intra-field corrections.

4. The method of claim 1 , wherein the computing step includes:

subtracting measured data of the first semiconductor wafer from corresponding target data to provide a residue; and

subtracting the first intra-field correction from the residue to provide an intra-field offset of the second layer of the second wafer.

5. The method of claim 4 , wherein the computing step further includes:

computing an inverse of the intra-field offset of the second layer of the second wafer to provide the second intra-field correction.

6. The method of claim 5 , further comprising combining the second intra-field correction with the first intra-field correction to determine a control action used to process the second wafer.

7. The method of claim 1 , further comprising

computing an Nth intra-field correction, where N is an integer greater than 2, based on intra-field corrections corresponding to respective second layers of a plurality of semiconductor wafers including the first semiconductor wafer, and an N−1th semiconductor wafer; and

performing a lithographic process on a second layer over a first layer over the Nth semiconductor wafer using the Nth intra-field correction.

8. The method of claim 7 , wherein each of the plurality of semiconductor wafers is included in a respectively different lot of semiconductor wafers.

9. A method for processing a plurality of lots of semiconductor wafers, each lot having a plurality of semiconductor wafers, each semiconductor wafer having a first layer thereon and a second layer over the first layer, the method comprising:

performing a lithographic process on the semiconductor wafers using at least one semiconductor fabrication tool;

adjusting one or more parameters of the semiconductor fabrication tool, the controller configured for:

performing the lithographic process on the second layer of each semiconductor wafer in the first lot using a first intra-field correction;

determining an overlay error of the lithographic process based on data sampled from the first lot; and

computing at least two different intra-field corrections corresponding to at least two other respective lots within the plurality of lots based in part on the first intra-field correction.

10. The method of claim 9 , wherein the computing step uses an exponential weighted moving average of intra-field corrections for each completed one of the plurality of lots to compute an intra-field correction to be used for performing the lithographic process on a next one of the plurality of lots.

11. The method of claim 9 , wherein the semiconductor fabrication tool is a scanner.

12. The method of claim 9 , wherein determining the overlay error includes:

receiving measurements of a plurality of values in each of a plurality of fields within at least one wafer within the first one of the plurality of lots;

comparing the measurements to respective target values;

computing a standard deviation of each of the plurality of values across the plurality of fields.

13. The method of claim 12 , wherein determining the overlay error further includes computing a residue array, such that each value in the residue array is three times the standard deviation of a respective one of the plurality of values.

14. The method of claim 9 , wherein:

the method further comprises separating the overlay error into an inter-field error and an intra-field error,

the step of causing the tool to perform the lithographic process on the second layer includes applying an inter-field correction, and

the at least two different intra-field corrections are based in part on the intra-field error.

15. A method comprising:

performing a lithographic process on a pre-determined layer over each wafer in at least first, second and third lots of semiconductor wafers;

computing an intra-field correction of semiconductor wafers in the first lot based on measurement data from the first lot; and

computing respectively different intra-field corrections for each respective one of the second and third lots of wafers, the intra-field correction of the second lot based in part on the intra-field correction of the first lot, the intra-field correction of the third lot based in part on the intra-field correction of the first lot and the intra-field correction of the second lot, the second and third intra-field corrections being applied to perform the lithographic process on the second and third lots, respectively.

16. The method of claim 15 , wherein the third intra-field correction is computed using an exponential weighted moving average of the first and second intra-field corrections.

17. The method of claim 15 , wherein the lithographic tool processes one or more additional lots of semiconductor wafers using a respectively different additional intra-field correction for each additional lot, and each of the additional intra-field corrections is based in part on each respective one of the intra-field corrections applied in processing each previously processed lot of semiconductor wafers among the first, second, third and additional lots.

18. The method of claim 15 , wherein the method includes:

subtracting the measurement data of the first lot from corresponding target intra-field data to provide a residue;

subtracting the intra-field correction of the first lot from the residue to provide an intra-field offset of the pre-determined layer of the second lot;

computing an inverse of the intra-field offset of the pre-determined layer of the second lot to provide the second intra-field correction; and

combining the second intra-field correction to the first intra-field correction to determine a control action used to process the second lot.

19. The method of claim 15 , the method comprises computing an overlay error based on the measurement data, and dividing the overlay error into the intra-field error and an inter-field error.

20. The method of claim 19 , wherein:

the method comprises computing an inter-field correction for each of the lots; and

the intra-field correction for each lot is in part based on the inter-field correction and intra-field correction corresponding to a layer adjacent to the pre-determined layer in each one of the lots that has already been processed by the semiconductor fabrication tool.