Room-temperature bonding apparatus

1. A room-temperature bonding apparatus comprising:

a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate, respectively;

a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate, respectively; and

a pressure welding mechanism configured to bond the first substrate and the second substrate by bringing the first activation surface and the second activation surface into contact after the first activation surface and the second activation surface are irradiated;

a plurality of installation adjusting mechanisms corresponding to said plurality of first beam sources and said plurality of second beam sources,

wherein one installation adjusting mechanism, corresponding to an optional beam source, of said plurality of installation adjusting mechanisms fixes the optional beam source on an optional installation position of a plurality of installation positions;

a first support apparatus configured to support the first substrate when the first activation surface is irradiated by the plurality of first activation beams; and

a second support apparatus configured to support the second substrate when the second activation surface is irradiated by the plurality of second activation beams,

wherein the plurality of first beam sources are arranged to be rotationally symmetric with respect to a first rotation axis,

wherein the first rotation axis is orthogonal to the first activation surface when the first activation surface is irradiated by the plurality of first activation beams,

wherein said plurality of second beam sources are arranged to be rotationally symmetric with respect to a second rotation axis, and

wherein the second rotation axis is orthogonal to the second activation surface when the second activation surface is irradiated with the plurality of second activation beams.

2. The room-temperature bonding apparatus according to claim 1 , further comprising:

a control unit configured to control said plurality of first beam sources and said plurality of second beam sources such that an optional activation beam of the plurality of first activation beams and the plurality of second activation beams is different from another activation beam, which is different from the optional activation beam, of the plurality of first activation beam and the plurality of second activation beams.

3. The room-temperature bonding apparatus according to claim 2 , further comprising:

an exhaust unit configured to generate a vacuum inside a chamber in which the plurality of first activation beams and the plurality of second activation beams are emitted, by exhausting the inside of the chamber,

wherein said control unit controls the plurality of first activation beam sources and the plurality of second activation beam sources such that another activation beam, which is different from the optional activation beam of the plurality of first beams and the plurality of second beams, is not emitted in a period for which the optional activation beam of the plurality of first activation beams and the plurality of second activation beams is emitted.

4. The room-temperature bonding apparatus according to claim 3 , further comprising:

a plurality of gas kind switching mechanisms corresponding to said plurality of first beam sources and said plurality of second beam sources,

wherein one gas kind switching mechanism corresponding to an optional beam source of said plurality of gas kind switching mechanisms supplies an optional gas of a plurality of gases to said optional beam source, and

wherein said optional beam source generates an activation beam from the optional gas.

5. A beam source installation position adjusting method performed by a room-temperature bonding apparatus which comprises:

a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate, respectively;

a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate, respectively;

a pressure welding mechanism configured to bond the first substrate and the second substrate by bringing the first activation surface and the second activation surface into contact after the first activation surface and the second activation surface are irradiated; and

a plurality of installation adjusting mechanisms corresponding to said plurality of first beam sources and said plurality of second beam sources,

wherein one installation adjusting mechanism corresponding to an optional beam source of said plurality of installation adjusting mechanisms fixes the optional beam source on an optional installation position of a plurality of installation positions,

said beam source installation position adjusting method comprising:

irradiating a plurality of first etching rate measurement activation beams respectively emitted from the plurality of first beam sources to a first surface of a first etching rate measurement substrate, and a plurality of second etching rate measurement activation beams respectively emitted from the plurality of second beam sources to a second surface of a second etching rate measurement substrate;

measuring a plurality of first etching rates showing etching rates of a plurality of first regions on the first surface when the plurality of first etching rate measurement activation beams are irradiated to the first surface, and a plurality of second etching rates showing etching rates of a plurality of second regions on the second surface when the plurality of second etching rate measurement activation beams are irradiated to the second surface; and

adjusting the plurality of installation adjusting mechanisms such that the plurality of first beam sources are positioned to a plurality of first positions which are calculated based on the plurality of first etching rates, and the plurality of second beam sources are positioned to a plurality of second positions which are calculated based on the plurality of second etching rates.

6. The beam source installation position adjusting method according to claim 5 , wherein the first surface of the first etching rate measurement substrate is covered with a protection film such that the plurality of first regions are irradiated with the plurality of first etching rate measurement activation beams,

wherein one first etching rate corresponding to an optional first region of the plurality of first etching rates is calculated based on an etching depth of the optional first region when the plurality of first etching rate measurement activation beams are irradiated to the first surface,

wherein the second surface of the second etching rate measurement substrate is covered with a protection film such that the plurality of second regions are irradiated with the plurality of second etching rate measurement activation beams, and

wherein one second etching rate corresponding to an optional second region of the plurality of second etching rates is calculated based on an etching depth of the optional second region when the plurality of second etching rate measurement activation beams are irradiated to the second surface.