Three dimensional memory array architecture
Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines.
1. A method of forming a memory array, comprising:
forming a stack comprising a plurality of first conductive lines separated from one another by insulation material;
forming a plurality of self-aligned vias through the stack between the plurality of first conductive lines;
forming cell select material within the plurality of vias;
forming storage element material within the plurality of vias;
forming a conductive extension within one of the plurality of vias; and
forming second conductive lines substantially perpendicular to the first conductive lines and the conductive extension,
wherein the conductive extension is coupled to the second conductive lines as an extension thereof.
2. The method of claim 1 , wherein the plurality of vias are located along each side of each of the plurality of first conductive lines.
3. The method of claim 1 , wherein the plurality of vias are located along only one side of each of the plurality of first conductive lines.
4. The method of claim 1 , wherein forming second conductive lines includes forming second conductive lines over the conductive extension, and wherein the plurality of vias are located along alternating pairs of the plurality of first conductive lines which are offset by one position along adjacent second conductive lines.
5. The method of claim 1 , further comprising forming a second conductive extension within another one of the plurality of vias adjacent the conductive extension,
wherein forming second conductive lines includes forming at least one of the second conductive lines under the conductive extension and includes forming at least another one of the second conductive lines over the second conductive extension.
6. The method of claim 1 , wherein:
forming the storage element material includes forming phase change material (PCM); and
forming cell select material includes forming ovonic threshold switch (OTS) material.
7. The method of claim 1 , further comprising forming heater material between and adjacent to each of the plurality of first conductive lines and the storage element material, wherein the first conductive lines are not in contact with the storage element material.
8. The method of claim 1 , further comprising forming the heater material between a first and second portion of each of the first conductive lines.
9. The method of claim 1 , further comprising forming memory cell structures between each of the plurality of first conductive lines,
wherein memory cell structures include at least one conductive extension, storage element material, and cell select material; and
wherein forming second conductive lines includes forming the second conductive lines in a pitch that is half a pitch of memory cell structures.
10. The method of claim 1 , wherein forming second conductive lines includes:
forming a first quantity of second conductive lines over the first conductive lines; and
forming a second quantity of second conductive lines under the first conductive lines,
wherein each of the second conductive lines are arranged to be coupled to every other one of a plurality of conductive extensions.
11. A method of forming a memory array, comprising:
forming a stack comprising a plurality of conductive lines at a number of levels separated from one another by at least an insulation material;
forming at least one conductive extension arranged to extend substantially perpendicular to the plurality of conductive lines;
forming a heater material proximal the at least one conductive extension;
forming storage element material proximal the at least one conductive extension, wherein the storage element material is adjacent to the heater material; and
forming cell select material proximal the at least one conductive extension,
wherein the at least one conductive extension, storage element material, heater material and cell select material are located between co-planar pairs of the plurality of conductive lines.
12. The method of claim 11 , wherein:
forming the storage element material includes forming the storage element material concentrically around and adjacent to the at least one conductive extension; and
forming the cell select material includes forming the cell select material concentrically around and adjacent to the at least one conductive extension.
13. The method of claim 11 , wherein:
forming the storage element material includes forming the storage element material to be located between the at least one conductive extension and a respective one of the plurality of conductive lines; and
forming the cell select material includes forming the cell select material to be located between the at least one conductive extension and a respective one of the plurality of conductive lines.
14. The method of claim 11 , wherein:
forming the at least one conductive extension includes forming the at least one conductive extension to be located between pairs of the plurality of conductive lines;
forming the storage element material includes forming the storage element material to be located between pairs of the plurality of conductive lines; and
forming the cell select material includes forming the cell select material to be located between pairs of the plurality of conductive lines.
15. A method of forming a memory array, comprising:
forming a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material;
forming a number of memory cell structures, including:
forming at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines;
forming a heater material proximal the at least one conductive extension;
forming storage element material proximal the at least one conductive extension, wherein the storage element material is adjacent to the heater material; and
forming cell select material proximal the at least one conductive extension
wherein the number of memory cell structures are located between every other of the plurality of first conductive lines.
16. The method of claim 15 , further comprising:
forming a first plurality of second conductive lines over the plurality of first conductive lines and the plurality of memory cell structures;
forming a second plurality of second conductive lines under the plurality of first conductive lines and the plurality of memory cell structures;
coupling alternating ones of the plurality of memory cell structures in a direction perpendicular to the plurality of first conductive lines to the first plurality of second conductive lines; and
coupling remaining alternating ones of the plurality of memory cell structures in the direction perpendicular to the plurality of first conductive lines to the second plurality of second conductive lines.
17. The method of claim 15 , further comprising forming a heater material adjacent to and coupled with each of the plurality of first conductive lines, wherein forming the heater material includes forming the heater material to have a cross-sectional area smaller than that of at least one of the plurality of first conductive lines with the heater material being arranged in series between a respective one of the at least one of the plurality of first conductive lines and the storage element material.
18. The method of claim 15 , further comprising forming a heater material adjacent the storage element material, wherein forming the heater material includes forming the heater material to be coupled with a corresponding one of the plurality of first conductive lines such that the heater material protrudes from an edge of the corresponding one of the plurality of first conductive lines, and wherein the cell select material is formed between the storage element material and the at least one conductive extension.
19. The method of claim 15 , wherein forming the number of memory cell structures includes forming the memory cell structures to be located only along one side of a respective one of the plurality of first conductive lines.