Semiconductor device including spiral data path

1. A semiconductor device comprising:

first, second, third and fourth chips stacked in this order, each of the first, second, third and fourth chips including first, second, third and fourth terminals formed above a first surface thereof, a memory cell array, and a first in first out (FIFO) circuit;

wherein each of the first, second and third chips includes fifth, sixth, seventh and eighth terminals formed above a second surface opposite to the first surface, the FIFO circuit coupled in series between the first terminal and the eighth terminal, the second terminal coupled to the fifth terminal, the third terminal coupled to the sixth terminal and the fourth terminal coupled to the seventh terminal.

2. The semiconductor device as claimed in claim 1 , wherein each of the first, second and third chips includes first, second, third and fourth through substrate vias (TSVs) that penetrate a substrate, wherein the first terminal and the eighth terminal are coupled via the first TSV and the FIFO circuit, the second terminal and the fifth terminal are coupled via the second TSV, the third terminal and the sixth terminal are coupled via the third TSV and the fourth terminal and the seventh terminal are coupled via the fourth TSV.

3. The semiconductor device as claimed in claim 1 , wherein each of the first, second and third chips includes a first signal path formed between the second terminal and the fifth terminal being free from a FIFO circuit, a second signal path formed between the third terminal and sixth terminal being free from a FIFO circuit, and a third signal path formed between the fourth terminal and the seventh terminal being free from a FIFO circuit.

4. The semiconductor device as claimed in claim 1 , wherein the FIFO circuit includes a writing FIFO circuit configured to receive data on the first terminal, and a reading FIFO circuit configured to output data to the first terminal.

5. The semiconductor device as claimed in claim 4 , wherein each of the first, second and third chips includes a first selecting circuit configured to provide an output of the writing FIFO circuit to one of the eighth terminal and the memory cell array.

6. The semiconductor device as claimed in claim 5 , wherein each of the first, second and third chips includes a second selecting circuit configured to provide one of data on the eighth terminal or data read from the memory cell array to the reading FIFO circuit.

7. The semiconductor device as claimed in claim 1 , wherein each of the first, second, third and fourth chips includes first and second control terminals formed above the first terminal, wherein the FIFO circuit is configured to receive data from the first terminal responsive to a first control signal above the first control terminal, and output data to the first terminal responsive to a second control signal on the second control terminal.

8. The semiconductor device as claimed in claim 1 , wherein each of the first, second and third chips includes

a first command terminal formed on the first surface,

a second command terminal formed on the second surface,

a command TSV coupled between the first and second command terminals, and

a command circuit coupled to the first and second terminals.

9. A semiconductor device comprising:

a first terminal formed above a first surface of a semiconductor substrate;

a second terminal formed above a second surface of the semiconductor substrate opposite to the first surface;

a first through substrate via (TSV) penetrating the semiconductor substrate; and

a first-in first-out (FIFO) circuit;

wherein the first TSV and the FIFO circuit are coupled in series between the first terminal and the second terminal.

10. The semiconductor device as claimed in claim 9 , further comprising:

a third terminal formed above the first surface;

a fourth terminal formed above the second surface; and

a second TSV penetrating the substrate;

wherein the third terminal and the fourth terminal are coupled to one another via the second TSV without a FIFO circuit.

11. The semiconductor device as claimed in claim 9 , wherein the FIFO circuit includes a writing FIFO circuit configured to receive data on the first terminal, and a reading FIFO circuit configured to output data to the first terminal.

12. The semiconductor device as claimed in claim 11 , further comprising a memory cell array and a first selection circuit, the first selection circuit configured to selectively provide an output from the writing FIFO circuit to one of the third terminal and the memory cell array.

13. The semiconductor device as claimed in claim 12 , further comprising a second selection circuit configured to selectively provide one of data on the third terminal and data read from the memory cell array to the reading FIFO circuit.

14. The semiconductor device as claimed in claim 9 , wherein each of the first and second terminals is a data input output terminal to input and output a data.

15. The semiconductor device as claimed in claim 9 , further comprising

a first and second control terminals formed above the first surface,

wherein the FIFO circuit is configured to receive data from the first terminal responsive to a first control signal on the first control terminal, and output data to the first terminal responsive to a second control signal on the second control terminal.

16. The semiconductor device as claimed in claim 9 , further comprising

a first command terminal formed above the first surface,

a second command terminal formed above the second surface,

a command TSV coupled between the first and second command terminals, and

a command circuit coupled to the first and second terminals.