Multi-aperture extraction system for angled ion beam
An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created. The extraction aperture includes a plurality of rotatable plates. Ion beamlets are extracted through apertures defined by the plurality of rotatable plates. The degree to which these plates are rotated determines the angle of extraction for the extracted ion beam. These plates may be formed in a plurality of different shapes, which may increase the maximum extraction angle that is achievable. Additionally, electrodes may be disposed near the plates to affect the extraction angle.
1. A plasma processing apparatus, comprising:
a top surface;
a plurality of sidewalls, defining a plasma processing chamber, the plasma processing chamber biased at an extraction voltage;
an RF coil to energize a process gas to form a plasma in the plasma processing chamber; and
a bottom surface comprising a plurality of plates, each plate pivotably attached to the bottom surface and biased at an extraction plate voltage, wherein ion beamlets are extracted through apertures defined by the plurality of plates.
2. The plasma processing apparatus of claim 1 , wherein each of the plurality of plates comprises a straight portion.
3. The plasma processing apparatus of claim 1 , wherein each of the plurality of plates comprises a first straight portion and a second straight portion extending from one end of the first straight portion.
4. The plasma processing apparatus of claim 3 , wherein each of the plurality of plates comprises a third straight portion extending from an opposite end of the first straight portion, in a direction opposite a direction of the second straight portion.
5. The plasma processing apparatus of claim 3 , wherein each of the plurality of plates comprises a triangular portion disposed at an opposite end of the first straight portion.
6. The plasma processing apparatus of claim 1 , wherein the plurality of plates are rotated so that each one of the plurality of plates forms an angle between the bottom surface and the respective plate, and all of the plurality of plates form a same angle.
7. The plasma processing apparatus of claim 1 , wherein the plurality of plates are rotated so that each one of the plurality of plates forms an angle between the bottom surface and the plate, and the plurality of plates form a plurality of different angles.
8. The plasma processing apparatus of claim 1 , wherein the plurality of plates are rotated so that each one of the plurality of plates form an angle between the bottom surface and the plate, and the angle formed is varied based on a distance from the plate to a center of the plasma processing chamber.
9. The plasma processing apparatus of claim 1 , wherein the bottom surface comprises a second plate biased at a voltage different than the extraction plate voltage.
10. The plasma processing apparatus of claim 1 , wherein the extraction plate voltage is equal to or less positive than the extraction voltage.
11. The plasma processing apparatus of claim 1 , wherein the bottom surface comprises:
a plurality of electrodes biased at a second voltage different than the extraction plate voltage.
12. The plasma processing apparatus of claim 11 , wherein the plurality of electrodes comprises a plurality of rods, wherein the plurality of plates is disposed between the plurality of rods and the plasma processing chamber.
13. The plasma processing apparatus of claim 12 , wherein movement of the plurality of rods is related to rotation of the plurality of plates.
14. The plasma processing apparatus of claim 11 , wherein the plurality of electrodes is biased at a second voltage more negative than the extraction plate voltage.
15. A plasma processing apparatus, comprising:
a top surface;
a plurality of sidewalls, defining a plasma processing chamber;
an RF coil to energize a process gas to form a plasma in the plasma processing chamber; and
a bottom surface comprising:
a plurality of plates, each plate pivotably attached to the bottom surface and biased at an extraction plate voltage, wherein ion beamlets are extracted through apertures defined by the plurality of plates; and
a plurality of electrodes biased at a second voltage different than the extraction plate voltage,
wherein each of the plurality of plates comprises an L-shaped element, comprising a first straight portion and a second straight portion extending from one end of the first straight portion, and each of the plurality of electrodes comprises an I-shaped element, comprising a straight portion, wherein the I-shaped element is disposed parallel to the first straight portion of the L-shaped element.
16. The plasma processing apparatus of claim 15 , wherein a dielectric material is disposed between the I-shaped element and the L-shaped element.
17. The plasma processing apparatus of claim 15 , wherein the second straight portion extends beyond the I-shaped element, shielding the I-shaped element from beam strike.
18. A plasma processing apparatus, comprising:
a plasma processing chamber to create a plasma, having a bottom surface, wherein the bottom surface comprises a plurality of plates pivotably attached to the bottom surface, wherein ion beamlets are extracted through apertures defined by the plurality of plates, and wherein a rotation and voltage of each of the plurality of plates is adjusted to achieve a desired extraction angle.
19. The plasma processing apparatus of claim 18 , wherein the plurality of plates are separated into groups, and the rotation of each group is independently controlled.
20. The plasma processing apparatus of claim 18 , wherein the plurality of plates are separated into groups, and the voltage applied to each group is independently controlled.