Magnetic memory device
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
1. A memory device comprising:
a free layer including Co;
a reference layer comprising;
a first contact magnetic layer including CoFeB;
a vertical magnetic layer including a first sub-layer layer and a second sub-layer; and
an exchange coupling layer disposed between the first sub-layer and the second sub-layer; and
a tunnel barrier layer disposed between the free layer and the reference layer.
2. The memory device of claim 1 , wherein the free layer further comprises Fe.
3. The memory device of claim 2 , wherein the free layer further comprises B.
4. The memory device of claim 3 , wherein the free layer further comprises Ni.
5. The memory device of claim 1 , further comprising a capping layer on the free layer.
6. The memory device of claim 5 , wherein the capping layer includes at least one of Ta, TaN or TiN.
7. The memory device of claim 1 , wherein the first sub-layer includes Co.
8. The memory device of claim 7 , wherein the first sub-layer further comprises Ir.
9. The memory device of claim 7 , wherein the second sub-layer includes Co.
10. The memory device of claim 9 , wherein the second sub-layer further comprises Pt.
11. The memory device of claim 1 , wherein the exchange coupling layer includes at least one of Ru, Rh, Cr or Ir.
12. A memory device comprising:
a first magnetic layer;
a non-magnetic layer on the first magnetic layer;
a second magnetic layer on the non-magnetic layer, the non-magnetic layer disposed between the first magnetic layer and the second magnetic layer;
a junction magnetic layer on second magnetic layer;
a tunnel barrier on the junction magnetic layer, the junction magnetic layer disposed between the first magnetic layer and the tunnel barrier;
a free layer on the tunnel barrier, the tunnel barrier disposed between the free layer and the junction magnetic layers; and
a capping layer.
13. The memory device of claim 12 , wherein magnetization directions of the first and second magnetic layers are perpendicular with respect to a plane of the tunnel barrier.
14. The memory device of claim 12 , wherein the junction magnetic layer comprises at least one of cobalt (Co), iron (Fe), or nickel (Ni).
15. The memory device of claim 12 , wherein the first magnetic layer comprise at least one of cobalt (Co) or platinum (Pt).
16. The memory device of claim 12 , wherein the first magnetic layer comprise at least one of Ta, Al, Cu, Au, Ag, TaN, or TiN.
17. The memory device of claim 12 , wherein the non-magnetic layer comprises an exchange coupling layer.
18. The memory device of claim 17 , wherein the exchange coupling layer comprise at least one of Ru, Rh, Cr or Ir.
19. The memory device of claim 12 , wherein the first magnetic layer, the non-magnetic layer and the second magnetic layer comprises a reference layer.
20. The memory device of claim 12 , wherein the first magnetic layer includes at least one of Co or Pt.