Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer
The invention relates to a test device for testing a bonding layer between wafer-shaped samples and a test process for testing the bonding layer. The test device comprises a measuring head for an OCT process that is configured to direct an optical measuring beam at a composite comprising at least two wafer-shaped samples with a bonding layer positioned between them. An optical beam splitter is configured to divert an optical reference beam as a reference arm for distance measurements. An evaluation unit is configured to evaluate layer thickness measurements without a reference arm and distance measurements with a reference arm. An optical switch device is configured to connect and disconnect the reference arm.
1. A test process for testing a bonding layer, the test process comprising:
creating a flat layer thickness image of the bonding layer with a test device through an OCT process, the test device comprising:
a layer thickness measuring head configured for the OCT process, the measuring head directing an optical measuring beam at a composite comprising at least two wafer-shaped samples with the bonding layer positioned between them,
an optical beam splitter plane configured to divert an optical reference beam from the optical measuring beam as a reference arm for distance measurements, and
an evaluation unit configured to evaluate layer thickness measurements without the reference arm and distance measurements with the reference arm;
setting the measuring head to an identified defect area of the bonding layer by narrowing a depth measurement range to less than 10 interference maxima;
optically disconnecting the reference arm via an optical switch device;
measuring a layer thickness profile along a measurement track in the defect area of the bonding layer;
optically connecting the reference arm via the optical switch device;
measuring a distance profile on the measurement track in the defect area of the bonding layer;
taking a profile scan of the bonding layer with alternating layer thickness measurements and distance measurements at a scan position on the measurement track, wherein the layer thickness measurements are measured with the reference arm optically disconnected and the distance measurements are measured with the reference arm optically connected;
comparing the profile scan with the layer thickness profile and the distance profile in order to classify a measured value as a thickness measurement value or a distance measurement value.
2. The process of claim 1 , further comprising:
evaluating the classification of the measured value in relation to the defect area on the bonding layer; and
producing a measurement graph.
3. The process of claim 1 , further comprising classifying the measured value of the defect area as a foreign particle in the bonding layer or a cavity in the bonding layer.
4. The process of claim 1 , further comprising identifying warped sections on a surface of the composite by optically connecting the reference arm of the test device and calculating a distance value between the measuring head and the surface of the composite.