Magnetic tunnel junctions, methods used while forming magnetic tunnel junctions, and methods of forming magnetic tunnel junctions
A method used while forming a magnetic tunnel junction comprises forming non-magnetic tunnel insulator material over magnetic electrode material. The tunnel insulator material comprises MgO and the magnetic electrode material comprises Co and Fe. B is proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material. B-absorbing material is formed over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material. B is absorbed from proximate the opposing facing surfaces laterally into the B-absorbing material. Other embodiments are disclosed, including magnetic tunnel junctions independent of method of manufacture.
1. A method used while forming a magnetic tunnel junction, comprising:
forming non-magnetic tunnel insulator material over magnetic electrode material, the tunnel insulator material comprising MgO, the magnetic electrode material comprising Co and Fe, B being proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material; and
forming B-absorbing material over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material and absorbing B from proximate the opposing facing surfaces laterally into the B-absorbing material, the B-absorbing material being conductive at least after the absorbing.
2. The method of claim 1 wherein the B-absorbing material comprises an elemental-form metal or an alloy of two or more metal elements.
3. The method of claim 2 wherein the metal comprises Al, Ta, or W.
4. The method of claim 2 wherein the B-absorbing material comprises an elemental-form metal.
5. The method of claim 4 wherein the elemental-form metal comprises Al.
6. The method of claim 4 wherein the elemental-form metal comprises Ta.
7. The method of claim 4 wherein the elemental-form metal comprises W.
8. The method of claim 2 wherein the B-absorbing material comprises an alloy of two or more metal elements.
9. A method used while forming a magnetic tunnel junction, comprising:
forming non-magnetic tunnel insulator material over magnetic electrode material, the tunnel insulator material comprising MgO, the magnetic electrode material comprising Co and Fe, B being proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material; and
forming B-absorbing material over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material and absorbing B from proximate the opposing facing surfaces laterally into the B-absorbing material, the B-absorbing material being semiconductive at least after the absorbing.
10. The method of claim 9 wherein the semiconductive B-absorbing material comprises AlN.
11. A method used while forming a magnetic tunnel junction, comprising:
forming non-magnetic tunnel insulator material over magnetic electrode material, the tunnel insulator material comprising MgO, the magnetic electrode material comprising Co and Fe, B being proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material;
forming B-absorbing material over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material and absorbing B from proximate the opposing facing surfaces laterally into the B-absorbing material; and
after absorbing the B, removing any remnant of the B-absorbing material, any remnant of any reaction product of B with the B-absorbing material, and the absorbed B.
12. A method used while forming a magnetic tunnel junction, comprising:
forming non-magnetic tunnel insulator material over magnetic electrode material, the tunnel insulator material comprising MgO, the magnetic electrode material comprising Co and Fe, B being proximate opposing facing surfaces of the tunnel insulator material and the magnetic electrode material; and
forming B-absorbing material over a sidewall of at least one of the magnetic electrode material and the tunnel insulator material and absorbing B from proximate the opposing facing surfaces laterally into the B-absorbing material, the opposing facing surfaces, the tunnel insulator, and the magnetic electrode material being devoid of B after the absorbing of B.
13. A method of forming a magnetic tunnel junction, comprising:
forming a stack comprising amorphous first magnetic electrode material, non-magnetic tunnel insulator material comprising MgO over the first material, and amorphous second magnetic electrode material over the tunnel insulator material; at least one of the first and second materials comprising Co, Fe, and B;
crystallizing the amorphous first and second magnetic electrode materials into crystalline first and second magnetic electrode materials, one of the crystalline first material and the crystalline second material comprising magnetic reference material of the magnetic tunnel junction being formed, the other of the crystalline first material and the crystalline second material comprising magnetic recording material of the magnetic tunnel junction being formed;
after the crystallizing, forming B-absorbing material over opposing sidewalls of each of the crystalline first magnetic electrode material, the tunnel insulator material, and the second magnetic electrode material;
absorbing B from said at least one of the crystalline first and second materials comprising Co, Fe, and B laterally into the B-absorbing material that is over said opposing sidewalls; and
wherein the B-absorbing material is conductive or semiconductive at least after the absorbing, and further comprising:
after absorbing the B, removing any remnant of the B-absorbing material, any remnant of any reaction product of B with the B-absorbing material, and the absorbed B.
14. A method of forming a magnetic tunnel junction, comprising:
forming amorphous first magnetic electrode material over a substrate, the first material comprising Co, Fe, and B;
forming non-magnetic tunnel insulator material comprising MgO over the first material;
forming amorphous second magnetic electrode material over the tunnel insulator material, the second material comprising Co, Fe, and B;
after forming the amorphous first and second magnetic electrode materials and the tunnel insulator material over the substrate, crystallizing the amorphous first and second magnetic electrode materials into crystalline first and second magnetic electrode materials;
after the crystallizing, patterning the crystalline first material, the tunnel insulator material, and the crystalline second material to form a magnetic tunnel junction structure having opposing sidewalls that individually comprise the crystalline first material, the tunnel insulator material, and the crystalline second material; one of the crystalline first material and the crystalline second material comprising magnetic reference material of the magnetic tunnel junction being formed; the other of the crystalline first material and the crystalline second material comprising magnetic recording material of the magnetic tunnel junction being formed;
covering all of said opposing sidewalls with B-absorbing material;
absorbing B from the first and second materials laterally into the B-absorbing material that covers all of said opposing sidewalls; and
reacting at least some of the absorbed B with the B-absorbing material to form a metal boride-comprising reaction product.