IP Library Granted Patent US 9,503,060
Granted Patent B2
US 9,503,060 · App. 14/709,431 · Granted Nov 22, 2016

Gate control circuit

Inventors: Thomas D. Brumett, Jr. (San Jose, CA); Marcelo Martinez (Davis, CA); John Othniel McDonald (Mountain House, CA)
Assignee: Silego Technology, Inc.
H03K3/012H03K17/166H03K17/687
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Quick Facts
Patent No.
US 9,503,060
App. No.
14/709,431
Granted
Nov 22, 2016
Kind
B2
Abstract

An integrated circuit for switching a transistor is disclosed. In some embodiments, an operational amplifier is configured to drive a transistor, and slew rate control circuitry is configured to control the slew rate of the transistor source voltage during turn on. The transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.

Claims (28)

1. An integrated circuit for switching a transistor, comprising:

an operational amplifier configured to drive the transistor;

slew rate control circuitry configured to control slew rate of the transistor source voltage during turn on; and

delay control circuitry configured to set a delay period, wherein the operational amplifier is configured to not begin driving the transistor until after expiration of the delay period.

2. The integrated circuit of claim 1 , wherein the operational amplifier is configured to drive the transistor in response to an input signal.

3. The integrated circuit of claim 1 , wherein the transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.

4. The integrated circuit of claim 1 , further comprising fault protection circuitry for detecting and protecting against one or more fault conditions.

5. The integrated circuit of claim 4 , wherein the fault protection circuitry includes one or more of: under voltage lock out circuitry, over current shut down circuitry, and over temperature shut down circuitry.

6. The integrated circuit of claim 1 , wherein the integrated circuit consumes active power while switching on or switching off the transistor but not during quiescent states of the transistor.

7. The integrated circuit of claim 1 , wherein the transistor comprises one of a plurality of transistors controlled by the integrated circuit.

8. The integrated circuit of claim 1 , wherein the integrated circuit is part of a series of integrated circuits daisy chained together to facilitate sequential switching of a series of associated power rails.

9. The integrated circuit of claim 1 , wherein the transistor is included in the integrated circuit.

10. The integrated circuit of claim 1 , wherein the integrated circuit includes circuitry to determine a current across the transistor.

11. The integrated circuit of claim 1 , wherein the transistor comprises a Field Effect Transistor (FET).

12. The integrated circuit of claim 1 , wherein the transistor comprises a power rail switch.

13. The integrated circuit of claim 1 , wherein the integrated circuit comprises a gate driver of the transistor.

14. A method for switching a transistor, comprising:

configuring an operational amplifier to drive the transistor;

configuring slew rate control circuitry to control slew rate of the transistor source voltage during turn on; and

configuring delay control circuitry to set a delay period, wherein the operational amplifier is configured to not begin driving the transistor until after expiration of the delay period.

15. The method of claim 14 , wherein the transistor source voltage is employed as feedback to the operational amplifier to facilitate closed loop control of the transistor source voltage during switching of the transistor.

16. The method of claim 14 , further comprising configuring fault protection circuitry for detecting and protecting against one or more fault conditions.

17. The method of claim 16 , wherein the fault protection circuitry includes one or more of: under voltage lock out circuitry, over current shut down circuitry, and over temperature shut down circuitry.

18. The method of claim 14 , wherein active power is consumed while switching on or switching off the transistor but not during quiescent states of the transistor.

19. The method of claim 14 , wherein the transistor comprises a Field Effect Transistor (FET).

20. The method of claim 14 , wherein the transistor comprises a power rail switch.

21. The method of claim 14 , wherein the operational amplifier is configured to drive the transistor in response to an input signal.

22. The method of claim 14 , further comprising configuring circuitry to determine a current across the transistor.

Assignments (1)
CHANGE OF NAME Recorded Nov 22, 2022
From: SILEGO TECHNOLOGY, INC.
To: RENESAS DESIGN TECHNOLOGY INC.
Reel/Frame 061987/0827 →
Continuity (6)
Continuation 14085733 · Nov 20, 2013
Continuation 13607498 · Sep 7, 2012
Continuation 13189397 · Jul 22, 2011
Continuation 12590326 · Nov 4, 2009
Provisional Application 61198707 · Nov 7, 2008
Related Publication 20150318843A1 · Nov 5, 2015