Semiconductor package and method of manufacturing the same
There are provided a semiconductor package and a method of manufacturing the same. The semiconductor package includes: a substrate having a ground electrode formed on one surface thereof; at least one electronic component mounted on one surface of the substrate; an insulation layer including an exposed part exposing the ground electrode and a cover part covering the electronic component; and a shielding layer electrically connected to the ground electrode and covering the insulation layer.
1. A semiconductor package comprising:
a substrate comprising a ground electrode formed on a surface of the substrate and shielding areas formed on the surface of the substrate, wherein the ground electrode divides the shielding areas and encloses each of the shielding areas;
electronic components mounted on each of the shielding areas;
insulation tape attached to the substrate and covering each of the shielding areas; and
a shielding layer connected to the ground electrode, exposed between the shielding areas and covering the insulation tape,
wherein each of the shielding areas block signals or electromagnetic waves between different shielding areas by the shielding layer.
2. The semiconductor package of claim 1 , wherein the ground electrode exposed between the shielding areas has a dotted line or a solid line shape.
3. The semiconductor package of claim 1 , wherein a distance from the electronic component to an outer surface of the shielding layer is 10 to 30 μm.
4. The semiconductor package of claim 1 , wherein the ground electrode is formed by exposing copper foil of the substrate having ground attributes.