Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.
1. A method for depositing a metal-doped amorphous carbon hardmask film, comprising:
arranging a substrate on a pedestal in a processing chamber;
supplying a carrier gas to the processing chamber;
supplying a hydrocarbon precursor gas to the processing chamber;
supplying a metal-based precursor gas to the processing chamber;
providing, to the pedestal, first RF power at a first frequency;
providing, to the pedestal, second RF power at a second frequency less than the first frequency;
one of creating plasma in or supplying plasma to the processing chamber; and
depositing a metal-doped amorphous carbon hardmask film on the substrate, wherein the carbon hardmask film includes metal carbide.
2. The method of claim 1 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.
3. The method of claim 1 , wherein the metal-based precursor gas comprises a metal halide precursor gas.
4. The method of claim 3 wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl C , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.
5. The method of claim 1 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.
6. The method of claim 1 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.
7. The method of claim 1 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.
8. The method of claim 1 , wherein the hydrocarbon precursor gas comprises C x H y , wherein x is an integer from 2 to 10 and y is an integer from 2 to 24.
9. The method of claim 1 , wherein the hydrocarbon precursor gas is selected from a group consisting of methane, acetylene, ethylene, propylene, butane, cyclohexane, benzene and toluene.
10. The method of claim 1 , wherein the metal-based precursor gas comprises tungsten hexafluoride, the hydrocarbon precursor gas comprises methane and the carrier gas comprises molecular hydrogen.
11. A method for depositing a metal-doped amorphous silicon hardmask film, comprising:
arranging a substrate in a processing chamber;
supplying a carrier gas to the processing chamber;
supplying a silicon precursor gas to the processing chamber;
supplying a metal-based precursor gas to the processing chamber;
one of creating plasma in or supplying plasma to the processing chamber; and
depositing a metal-doped amorphous silicon hardmask film on the substrate.
12. The method of claim 11 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.
13. The method of claim 11 , wherein the metal-based precursor gas comprises a metal halide precursor gas.
14. The method of claim 13 , wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl c , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.
15. The method of claim 11 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.
16. The method of claim 11 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.
17. The method of claim 11 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.
18. The method of claim 11 , wherein the silicon precursor gas is selected from a group consisting of silane and tetraethylorthosilicate.
19. A substrate processing system for depositing a metal-doped amorphous carbon hardmask film, comprising:
a processing chamber including a substrate support configured to support a substrate;
a gas supply system configured to selectively supply process gas to the processing chamber;
a plasma generator configured to selectively create plasma in or supply plasma to the processing chamber;
a controller configured to control the gas supply system and the plasma generator and configured to:
supply a carrier gas to the processing chamber;
supply a hydrocarbon precursor gas to the processing chamber;
supply a metal-based precursor gas to the processing chamber;
provide, to the substrate support, first RF power at a first frequency;
provide, to the substrate support, second RF power at a second frequency less than the first frequency;
control the plasma generator to create plasma in or supply plasma to the processing chamber; and
deposit a metal-doped amorphous carbon hardmask film on the substrate, wherein the carbon hardmask film includes metal carbide.
20. The substrate processing system of claim 19 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.
21. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises a metal halide precursor gas.
22. The substrate processing system of claim 21 , wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl c , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.
23. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.
24. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.
25. The substrate processing system of claim 19 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.
26. The substrate processing system of claim 19 , wherein the hydrocarbon precursor gas comprises C x H y , wherein x is an integer from 2 to 10 and y is an integer from 2 to 24.
27. The substrate processing system of claim 19 , wherein the hydrocarbon precursor gas is selected from a group consisting of methane, acetylene, ethylene, propylene, butane, cyclohexane, benzene and toluene.
28. The substrate processing system of claim 19 , wherein the metal-based precursor gas comprises tungsten hexafluoride, the hydrocarbon precursor gas comprises methane and the carrier gas comprises molecular hydrogen.
29. A substrate processing system for depositing a metal-doped amorphous silicon hardmask film, comprising:
a processing chamber including a substrate support configured to support a substrate;
a gas supply system configured to selectively supply process gas to the processing chamber;
a plasma generator configured to selectively create plasma in or supply plasma to the processing chamber;
a controller configured to control the gas supply system and the plasma generator and configured to:
supply a carrier gas to the processing chamber;
supply a silicon precursor gas to the processing chamber;
supply a metal-based precursor gas to the processing chamber;
control the plasma generator to create plasma in or supply plasma to the processing chamber; and
deposit a metal-doped amorphous silicon hardmask film on the substrate.
30. The substrate processing system of claim 29 , wherein the processing chamber comprises a plasma enhanced chemical vapor deposition (PECVD) processing chamber.
31. The substrate processing system of claim 29 , wherein the metal-based precursor gas comprises a metal halide precursor gas.
32. The substrate processing system of claim 31 , wherein the metal halide precursor gas is selected from a group consisting of WF a , TiCl b , WCl c , HfCl d , and TaCl e , where a, b, c, d and e are integers greater than or equal to one.
33. The substrate processing system of claim 29 , wherein the metal-based precursor gas comprises tetrakis(dimethylamino)titanium (TDMAT) precursor gas.
34. The substrate processing system of claim 29 , wherein the metal-based precursor gas comprises bis(tert-butylimido)-bis-(dimethylamido)tungsten (BTBMW) precursor gas.
35. The substrate processing system of claim 29 , wherein the carrier gas is selected from a group consisting of molecular hydrogen (H 2 ), argon (Ar), molecular nitrogen (N 2 ), helium (He), and/or combinations thereof.
36. The substrate processing system of claim 29 , wherein the silicon precursor gas is selected from a group consisting of silane and tetraethylorthosilicate.