Silicon-containing resist underlayer film-forming composition having sulfone structure

1. A composition for forming a resist underlayer film for lithography, comprising a co-hydrolysis condensation product of a hydrolyzable organosilane of the following Formula (1) and at least one organic silicon compound selected from the group consisting of the following Formula (3) and the following Formula (4):

[(R 1 ) a Si(R 2 ) (3−a) ] b (R 3 )  Formula (1)

[in Formula (1), R 1 is an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, or a cyano group, or a combination of any of these groups and is bonded to a Si atom through a Si—C bond; R 2 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 0 to 2; and b is an integer of 1 to 3],

R 1 a Si(R 2 ) 4−a   Formula (3)

[in Formula (3), R 1 is an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, an organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, an isocyanurate group, a hydroxy group, a cyclic amino group, or a cyano group, or a combination of any of these groups and is bonded to a silicon atom through a Si—C bond; R 2 is an alkoxy group, an acyloxy group, or a halogen group; and a is an integer of 0 to 3],

[R 1 c Si(R 2 ) 3−c ] 2 Y b   Formula (4)

[in Formula (4), R 1 is an alkyl group; R 2 is an alkoxy group, an acyloxy group, or a halogen group; Y is an alkylene group or an arylene group; b is an integer of 0 or 1; and c is an integer of 0 or 1], wherein

R 3 in Formula (1) is a group of Formula (2):

[in Formula (2), one to three groups of groups of R 4 , Ar 1 , R 5 , Ar 2 , and R 6 are bonded to a Si atom through a Si—C bond; R 4 is a monovalent to tetravalent hydrocarbon group optionally having a sulfide bond or an ether bond; R 5 is a divalent to tetravalent hydrocarbon group optionally having a sulfide bond or an ether bond; R 6 is an optionally substituted monovalent to tetravalent hydrocarbon group; each of Ar 1 and Ar 2 is an optionally substituted C 6-20 arylene group or an optional substituted C 6-20 aryl group; n 2 is an integer of 1; each of n 1 , n 3 , n 4 , and n 5 is an integer of 0 or 1; and n 4 and n 5 are not simultaneously an integer of 0].

2. The composition for forming a resist underlayer film according to claim 1 , wherein the co-hydrolysis-condensation product is of the compound of Formula (1) and the compound of Formula (3) and is included as a polymer.

3. The composition for forming a resist underlayer film according to claim 1 , further comprising an acid.

4. The composition for forming a resist underlayer film according to claim 1 , further comprising water.

5. The composition for forming a resist underlayer film according to claim 1 , further comprising an ammonium compound, a cyclic ammonium compound, a cyclic amine compound, or a sulfonium compound.

6. A resist underlayer film obtained by applying the composition for forming a resist underlayer film as claimed in claim 1 onto a semiconductor substrate and baking the composition.

7. A method for producing a semiconductor device, the method comprising:

applying the composition for forming a resist underlayer film as claimed in claim 1 onto a semiconductor substrate and baking the composition to faun a resist underlayer film;

applying a composition for a resist onto the resist underlayer film to form a resist film;

exposing the resist film to light;

after the light exposure, developing the resist film to form a resist pattern;

etching the resist underlayer film using the resist pattern; and

fabricating the semiconductor substrate using the resist film thus patterned and the resist underlayer film thus patterned.

8. A method for producing a semiconductor device, the method comprising:

forming an organic underlayer film on a semiconductor substrate;

applying the composition for forming a resist underlayer film as claimed in claim 1 onto the organic underlayer film and baking the composition to form a resist underlayer film;

applying a composition for a resist onto the resist underlayer film to form a resist film;

exposing the resist film to light;

after the light exposure, developing the resist film to form a resist pattern;

etching the resist underlayer film using the resist pattern;

etching the organic underlayer film using the resist underlayer film thus patterned; and

fabricating the semiconductor substrate using the organic underlayer film thus patterned.

9. The composition for forming a resist underlayer film for lithography according to claim 1 , wherein b in Formula (1).

10. The composition for forming a resist underlayer film according to claim 1 , further comprising:

a hydrolyzable organosilane consisting of a hydrolyzable organosilane of Formula (1) and at least one hydrolyzable organosilane selected from the group consisting of Formula (3) and Formula (4); or

a co-hydrolyzable product of the hydrolyzable organosilane.

11. A compound selected from the following group of compounds: