Bonded body and power module substrate

1. A bonded body comprising:

a ceramic member made of ceramics; and

a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material,

wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

2. The bonded body according to claim 1 ,

wherein the intermetallic compound layer is formed in a range of 0.1 μm to 100 μm from the interface between the ceramic member and the Cu—Sn layer.

3. A power module substrate comprising the bonded body according to claim 2 , wherein the substrate further comprises:

a ceramic substrate formed of the ceramic member; and

a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, and

wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the intermetallic compound layer which is positioned between the circuit layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the circuit layer.

4. The power module substrate according to claim 3 ,

wherein a metal layer is formed on a second surface of the ceramic substrate.

5. The power module substrate according to claim 4 ,

wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, and

wherein a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the metal layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the metal layer.

6. The power module substrate according to claim 4 ,

wherein the metal layer is made of Al or an Al alloy.

7. A power module substrate comprising the bonded body according to claim 1 , wherein the substrate further comprises:

a ceramic substrate formed of the ceramic member; and

a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, and

wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the intermetallic compound layer which is positioned between the circuit layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the circuit layer.

8. The power module substrate according to claim 7 ,

wherein a metal layer is formed on a second surface of the ceramic substrate.

9. The power module substrate according to claim 8 ,

wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, and

wherein a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the metal layer and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic substrate and the metal layer.

10. The power module substrate according to claim 8 ,

wherein the metal layer is made of Al or an Al alloy.