Methods for in-situ chamber clean utilized in an etching processing chamber
Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.
1. A method for in-situ chamber dry cleaning a processing chamber, comprising:
supplying a first cleaning gas including at least a BH 3 or B 2 H 6 gas and a CF 4 gas into a processing chamber in absence of a substrate disposed therein to remove a Ta containing material or a Ti containing material present in the processing chamber, wherein a ratio of the BH 3 or B 2 H 6 gas to the CF 4 gas is controlled at between about 1:0.5 and about 1:5;
subsequently switching the first cleaning gas to a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber; and
subsequently switching the second cleaning gas to a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber.
2. The method of claim 1 , wherein the first gas further comprises a halogen containing gas.
3. The method of claim 2 , wherein the halogen containing gas supplied in the first gas is selected from a group consisting of Cl 2 , HCl, and SiCl 4 .
4. The method of claim 1 , wherein the second cleaning gas further comprises an inert gas.
5. The method of claim 1 , wherein the halogen containing gas supplied in the second gas is selected from a group consisting of Cl 2 , HCl, and SiCl 4 .
6. The method of claim 1 , wherein the third cleaning gas further comprises fluorine containing gas.
7. The method of claim 6 , wherein the third cleaning gas further comprises a halogen containing gas.
8. The method of claim 6 , wherein the fluorine containing gas supplied in the third cleaning gas is selected from a group consisting of CF 4 , CHF 3 , CH 2 F 2 , C 2 F 6 , C 2 F 8 , SF 6 and NF 3 .
9. The method of claim 7 , wherein the halogen containing gas supplied in the third gas is selected from a group consisting of Cl 2 , HCl, and SiCl 4 .
10. The method of claim 1 , wherein supplying the first cleaning gas further comprising:
applying an RF power to form a plasma in the first cleaning gas;
reacting with the Ta containing material or the Ti containing material disposed in an interior of the processing chamber.
11. The method of claim 1 , further comprising:
terminating supplying of the third cleaning gas into the processing chamber; and
providing a substrate into the processing chamber;
performing an etching process on the substrate.
12. A method for in-situ chamber dry cleaning a processing chamber, comprising:
supplying a first cleaning gas including a mixture of a BH 3 or B 2 H 6 gas and a CF 4 gas into a processing chamber in absence of a substrate disposed therein to remove a Ta containing material or a Ti containing material present in the processing chamber, wherein a ratio of the boron containing gas to the fluorine containing gas is controlled at between about 1:0.5 and about 1:5;
subsequently switching the first cleaning gas to a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber; and
subsequently switching the second cleaning gas to a third cleaning gas including a mixture of at least an oxygen containing gas and a fluorine into the processing chamber in absence of the substrate to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber.
13. The method of claim 12 , wherein the boron containing gas supplied in the first cleaning gas reacts with the Ta containing material or the Ti containing material deposited on an interior of the processing chamber during an etch process.
14. A method for in-situ chamber dry cleaning a processing chamber, comprising:
supplying a first gas including a mixture of at least a BH 3 or B 2 H 6 gas and a CF 4 gas into the processing chamber to remove a Ta containing material or a Ti containing material present in the processing chamber;
subsequently switching the first gas to a second gas including at least a Cl 2 gas into the processing chamber to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber; and
subsequently switching the second gas to a third gas including a mixture of at least an O 2 gas and CF 4 gas into the processing chamber to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber.