Semiconductor device with self-heat reducing layers

1. A semiconductor device comprising:

a substrate;

a source region over the substrate;

a guard ring over the substrate, the guard ring being separated from the source region by a first spacing;

a first heat conductive layer over and coupling the source region and the guard ring;

a first via over a first portion of the first heat conductive layer;

a second via separate from the first via over a second portion of the first conductive layer;

a second heat conductive layer over and coupling the first via and the second via;

a third via over the first heat conductive layer; and

a third heat conductive layer coupled to the third via, wherein the third heat conductive layer is level with the second heat conductive layer, and the third heat conductive layer is separated from the second heat conductive layer,

wherein the first heat conductive layer is configured to dissipate heat generated by the semiconductor device from the source region to the guard ring and the substrate.

2. The semiconductor device of claim 1 , wherein the source region has a first width, the guard ring has a second width, the first heat conductive layer has a third width, and the third width is greater than or equal to a sum of the first width, the second width and the first spacing.

3. The semiconductor device of claim 2 , wherein the second heat conductive layer has a fourth width, and the fourth width is greater than or equal to a sum of the first width, the second width and the first spacing.

4. The semiconductor device of claim 3 , further comprising:

at least one additional heat conductive layer over the second heat conductive layer, wherein the at least one additional heat conductive layer has a fourth width, the fourth width is greater than or equal to a sum of the first width, the second width and the first spacing, and the at least one additional heat conductive layer is configured to dissipate heat from the semiconductor device.

5. The semiconductor device of claim 4 , wherein the at least one additional heat conductive layer is free from electrical connection from the source region.

6. The semiconductor device of claim 3 , wherein the second heat conductive layer has a fifth width, and the fifth width is maximized within an available spacing.

7. The semiconductor device of claim 1 , further comprising:

a gate structure; and

a gate contact over and coupled to the gate structure,

wherein the gate contact is configured to dissipate heat from the semiconductor device.

8. The semiconductor device of claim 7 , further comprising:

at least one additional gate contact over and coupled to the gate structure,

wherein the at least one additional gate contact is configured to dissipate heat from the semiconductor device.

9. The semiconductor device of claim 1 , wherein a heat conductivity of the first heat conductive layer and the second heat conductive layer are substantially the same.

10. The semiconductor device of claim 1 , wherein the second heat conductive layer is a metal line.

11. A semiconductor device comprising:

a substrate;

a source region over the substrate;

a guard ring over the substrate, the guard ring being separated from the source region by a first spacing; and

a first heat conductive layer directly coupled to the source region and directly coupled to the guard ring, wherein the first heat conductive layer is configured to dissipate heat generated by the semiconductor device from the source region to the guard ring.

12. The semiconductor device of claim 11 , wherein the first heat conductive layer extends beyond an edge of the guard ring farthest from the source region.

13. The semiconductor device of claim 11 , wherein the first spacing is less than a minimum design rule spacing.

14. The semiconductor device of claim 11 , further comprising:

a second heat conductive layer over the first heat conductive layer; and

a plurality of vias thermally connecting the first heat conductive layer to the second heat conductive layer.

15. The semiconductor device of claim 14 , further comprising:

an additional heat conductive layer over the first heat conductive layer, wherein the additional heat conductive layer is spaced from the second heat conductive layer; and

a via thermally connecting the first heat conductive layer to the additional heat conductive layer.

16. The semiconductor device of claim 11 , wherein the first heat conductive layer extends beyond an edge of the source region farthest from the guard ring.

17. The semiconductor device of claim 11 , further comprising a dummy device over the substrate, wherein the dummy device is thermally connected to first heat conductive layer.

18. A semiconductor device comprising:

a substrate;

a source region of an active device over the substrate;

a guard ring over the substrate, the guard ring being separated from the source region by a first spacing; and

a first heat conductive layer directly coupled to the source region and directly coupled to the guard ring, wherein the first heat conductive layer is configured to dissipate heat generated by the semiconductor device from the source region to the guard ring, and at least one of the source region or the guard ring extend beyond an outer edge of the first heat conductive layer.

19. The semiconductor device of claim 18 , further comprising a dummy device over the substrate, wherein the dummy device is thermally connected to the first heat conductive layer, wherein the guard ring is between the source region and the dummy device.

20. The semiconductor device of claim 18 , wherein a dimension of the first spacing violates a minimum design rule.