Semiconductor package assemblies with system-on-chip (SOC) packages
The invention provides a semiconductor package assembly. The semiconductor package assembly includes a first semiconductor package. The first semiconductor package includes a first semiconductor die having first pads thereon. First vias are disposed on the first semiconductor die, coupled to the first pads. A first dynamic random access memory (DRAM) die is mounted on the first semiconductor die, coupled to the first vias. A second semiconductor package is stacked on the first semiconductor package. The second semiconductor package includes a body having a die-attach surface and a bump-attach surface opposite to the die-attach surface. A second dynamic random access memory (DRAM) die is mounted on the die-attach surface, coupled to the body through the bonding wires. The number of input/output (I/O) pins of first DRAM die is different from the number of input/output (I/O) pins of the second DRAM die.
1. A semiconductor package assembly, comprising:
a system-on-chip (SOC) package, comprising:
a logic die having first pads thereon;
a first redistribution layer (RDL) structure coupled to the logic die; and
a molding compound surrounding the logic die, being in contact with the first RDL structure and the logic die; and
a dynamic random access memory (DRAM) package stacked on the SOC package, comprising:
a body having a die-attach surface and a bump-attach surface opposite to the die-attach surface; and
a dynamic random access memory (DRAM) die mounted on the die-attach surface, coupled to the body through the bonding wires,
wherein one of the SOC package and the DRAM package further comprises an additional dynamic random access memory (DRAM) die embedded therein,
wherein the additional DRAM die has through silicon via (TSV) interconnects formed through the additional DRAM die,
wherein the additional DRAM die is embedded in the SOC package, coupled to first vias on the first semiconductor die and the first RDL structure,
wherein the DRAM package is coupled to the first RDL structure of the SOC package by second vias passing through the molding compound between the DRAM package and the first RDL structure, and
wherein the logic die is surrounded by the second vias.
2. The semiconductor package assembly as claimed in claim 1 , wherein a number of input/output (I/O) pins of additional DRAM die is eight times greater than a number of input/output (I/O) pins of the DRAM die.
3. The semiconductor package assembly as claimed in claim 1 , wherein the SOC package comprises first vias disposed on the logic die, coupled to the first pads.
4. The semiconductor package assembly as claimed in claim 1 , wherein the DRAM package comprises:
a second redistribution layer (RDL) structure disposed on the bump-attach surface.
5. The semiconductor package assembly as claimed in claim 4 , wherein the additional DRAM die is disposed between the body and the second RDL structure.
6. The semiconductor package assembly as claimed in claim 1 , further comprising:
a base, wherein the SOC package is mounted on the base through first conductive structures.
7. The semiconductor package assembly as claimed in claim 1 , wherein the first DRAM die is disposed between the first semiconductor die and the RDL structure.
8. A semiconductor package assembly, comprising:
a system-on-chip (SOC) package, comprising:
a logic die haying first pads thereon;
a first redistribution layer (RDL) structure coupled to the logic die; and
a molding compound surrounding the logic die, being in contact with the first RDL structure and the logic die; and
a dynamic random access memory (DRAM) package stacked on the SOC package, comprising:
a body having a die-attach surface and a bump-attach surface opposite to the die-attach surface; and
a dynamic random access memory (DRAM) die mounted on the die-attach surface, coupled to the body through the bonding wires,
wherein one of the SOC package and the DRAM package further comprises an additional dynamic random access memory (DRAM) die embedded therein,
wherein the additional DRAM die has through silicon via (TSV) interconnects formed through the additional DRAM die,
wherein the additional DRAM die is embedded in the SOC package, coupled to first vias on the first semiconductor die and the first RDL structure,
wherein the DRAM package is coupled to the first RDL structure of the SOC package by second vias passing through the molding compound between the DRAM package and the first RDL structure, and
wherein the logic die is surrounded by the second vias, wherein the molding compound is in contact with the additional DRAM die.
9. The semiconductor package assembly as claimed in claim 8 , wherein a number of input/output (I/O) pins of additional DRAM die is eight times greater than a number of input/output (I/O) pins of the DRAM die.
10. The semiconductor package assembly as claimed in claim 8 , wherein the SOC package comprises first vias disposed on the logic die, coupled to the first pads.
11. The semiconductor package assembly as claimed in claim 8 , further comprising:
a base, wherein the SOC package is mounted on the base through first conductive structures.
12. The semiconductor package assembly as claimed in claim 8 , wherein the first DRAM die is disposed between the first semiconductor die and the RDL structure.
13. The semiconductor package assembly as claimed in claim 8 , wherein the DRAM package comprises:
a second redistribution layer (RDL) structure disposed on the bump-attach surface.
14. The semiconductor package assembly as claimed in claim 13 , wherein the additional DRAM die is disposed between the body and the second RDL structure.
15. A semiconductor package assembly, comprising:
a system-on-chip (SOC) package, comprising:
a logic die having first pads thereon;
a first redistribution layer (RDL) structure coupled to the logic die; and
a molding compound surrounding the logic die, being in contact with the first RDL structure and the logic die; and
a dynamic random access memory (DRAM) package stacked on the SOC package, comprising:
a body having a die-attach surface and a bump-attach surface opposite to the die-attach surface; and
a dynamic random access memory (DRAM) die mounted on the die-attach surface, coupled to the body through the bonding wires,
wherein one of the SOC package and the DRAM package further comprises an additional dynamic random access memory (DRAM) die embedded therein,
wherein the additional DRAM die has through silicon via (TSV) interconnects formed through the additional DRAM die,
wherein the additional DRAM die is embedded in the SOC package, coupled to first vias on the first semiconductor die and the first RDL structure,
wherein the DRAM package is coupled to the first RDL structure of the SOC package by second vias passing through the molding compound between the DRAM package and the first RDL structure, and
wherein the logic die is surrounded by the second vias, wherein the logic die is coupled to the RDL structure by third vias passing through the molding compound between the logic die and the first RDL structure.
16. The semiconductor package assembly as claimed in claim 15 , wherein the first DRAM die is surrounded by the third vias.
17. The semiconductor package assembly as claimed in claim 15 , wherein a number of input/output (I/O) pins of additional DRAM die is eight times greater than a number of input/output (I/O) pins of the DRAM die.
18. The semiconductor package assembly as claimed in claim 15 , wherein the SOC package comprises first vias disposed on the logic die, coupled to the first pads.
19. The semiconductor package assembly as claimed in claim 15 , further comprising:
a base, wherein the SOC package is mounted on the base through first conductive structures.
20. The semiconductor package assembly as claimed in claim 15 , wherein the first DRAM die is disposed between the first semiconductor die and the RDL structure.
21. The semiconductor package assembly as claimed in claim 15 , wherein the DRAM package comprises:
a second redistribution layer (RDL) structure disposed on the bump-attach surface.
22. The semiconductor package assembly as claimed in claim 21 , wherein the additional DRAM die is disposed between the body and the second RDL structure.