Metal wiring of semiconductor device and method for manufacturing the same

1. A method of forming a metal wiring in a semiconductor device, the method comprising:

forming an insulation layer and a first lower metal layer above a semiconductor component;

forming a plurality of inter-metal dielectric layers comprising at least one contact plug above the first lower metal layer;

forming a first upper metal layer on the plurality of inter-metal dielectric layers; and

forming a plurality of etching stop layers deposited on each of the plurality of inter-metal dielectric layers,

wherein the plurality of inter-metal dielectric layers are each a continuous multilayer oxide film formed between adjacent etching stop layers or between the first upper or lower metal layer and its respective adjacent etching stop layer,

wherein the plurality of inter-metal dielectric layers are each a multilayer oxide film comprising a plurality of alternating tensile stress oxide layers and compressive stress oxide layers,

wherein the plurality of inter-metal dielectric layers extends from a low voltage applying region of the semiconductor device to a high voltage applying region, and forms an isolator region in the high voltage applying region, and

wherein the first lower metal layer is electrically connected to the semiconductor component in the low voltage applying region.

2. The method of claim 1 , wherein the first lower metal layer is electrically connected to the first upper metal layer via the at least one contact plug, the first upper metal layer configured to be electrically connected to an external power supply, and the contact plug comprising tungsten or copper.

3. The method of claim 2 , the method further comprising forming a second lower metal layer and a second upper metal layer, the second lower metal layer and the second upper metal layer having the same thickness and material as the first lower metal layer and the first upper metal layer.

4. The method of claim 3 , wherein a total combined thickness of the plurality of inter-metal dielectric layers and the plurality of etching stop layers is 15-40 μm, and a thickness of each inter-metal dielectric layer is 1-5 μm.

5. The method of claim 3 , wherein the second upper metal layer and the second lower metal layer are formed on an upper portion and a lower portion, respectively, of the isolator region.

6. The method of claim 1 , wherein at least one of the contact plugs penetrates at least one of the etching stop layers.

7. The method of claim 1 , wherein the contact plugs are configured to function as a metal wiring and as a contact plug, each of the contact plugs that function as the metal wiring consisting of a same material.

8. The method of claim 1 , wherein at least one of the plurality of inter-metal dielectric layers is selected from the group consisting of plasma-enhanced tetraethyl-orthosilicate (PE-TEOS) and undoped silicate glass (USG).

9. The method of claim 1 , wherein a square-shaped via trench of a lowermost inter-metal dielectric layer of one side in two adjacent inter-metal dielectric layers contacts a square-shaped via trench of an inter-metal dielectric layer of another side.

10. The method of claim 1 , wherein a via trench of an inter-metal dielectric layer of one side in two adjacent inter-metal dielectric layers contacts a via trench of an inter-metal dielectric layer of another side in a crisscross manner.

11. The method of claim 10 , wherein the via trenches are spaced apart from each other by a predetermined distance and a predetermined parallel distance.