IP Library Granted Patent US 9,575,662
Granted Patent B2
US 9,575,662 · App. 14/670,978 · Granted Feb 21, 2017

Multi-device memory serial architecture

Inventors: Mostafa Naguib Abdulla (Rancho Cordova, CA); August Camber (Rocklin, CA)
Assignee: Micron Technology, Inc.
G06F3/0608G06F3/0656G06F3/0665G06F3/0688G06F3/0689G06F13/16G06F2003/0691G06F2003/0692
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Quick Facts
Patent No.
US 9,575,662
App. No.
14/670,978
Granted
Feb 21, 2017
Kind
B2
Abstract

Subject matter disclosed herein relates to memory devices comprising a memory array, a first port to interface with a memory controller directly or indirectly via another memory device, a second port to interface with yet another memory device, and a switch to selectively electrically connect the memory controller to a circuit path leading to the second port or to the memory array, wherein the switch may be responsive to a signal generated by the memory controller.

Claims (29)

1. A method of operating a memory device, the method comprising:

determining a particular memory device of a plurality of memory devices, connected via a chain topology comprising serial bidirectional interconnections between memory devices, to electronically access based on a command from a processor;

transmitting at least one signal from a memory controller directly via a conducting line to a switch within the particular memory device, wherein the conducting line is separate from the bidirectional interconnections;

electrically connecting a memory array of the particular memory device to a bidirectional interconnection interface of the particular memory device in response to the at least one signal while electrically disconnecting a memory array of a memory device between the memory controller and the particular memory device; and

while the memory of the memory device between the memory controller and the particular memory device is electrically disconnected, electrically connecting the memory array of the particular memory device indirectly to the memory controller via the bidirectional interconnections through the memory device between the memory controller and the particular memory device.

2. The method of claim 1 , wherein the command comprises a read, write, or erase instruction.

3. The method of claim 1 , wherein determining the particular memory device comprises determining which memory device of the plurality of memory devices to access based at least in part on a memory address provided with the command.

4. The method of claim 1 , wherein the signal comprises a multibit digital signal designating the memory array.

5. The method of claim 1 , wherein electrically connecting and electrically disconnecting comprises switching via a switch within each of the plurality of memory devices configured to directly interface the memory controller via an individual conducting line for each of the plurality of memory devices.

6. The method of claim 1 , wherein the switch comprises a micro-electro-mechanical (MEM) switch.

7. A method for operating a memory device, the method comprising:

providing a command, having at least a memory device address, from a processor to a memory controller;

selecting a particular memory device from a plurality of interconnected memory devices based on the memory device address of the command, wherein the particular memory device is indirectly connected to the memory controller via bidirectional interconnections through a memory device between the memory controller and the particular memory device;

transmitting a signal from the memory controller directly via a conducting line not connected to the bidirectional interconnections to a switch within the particular memory device to connect a memory array of the particular memory device to the memory controller via the bidirectional interconnections; and

disconnecting a memory array of the memory device between the memory controller and the particular memory device from the memory controller.

8. The method of claim 7 , wherein the command comprises a read, write, or erase instruction.

9. The method of claim 7 , wherein each of the plurality of interconnected memory devices comprises a switch for connecting and disconnecting each of the plurality of interconnected memory devices from the memory controller.

10. The method of claim 7 , wherein the memory device is selected from the group consisting of DRAM, NAND flash memory, NOR flash memory, and phase change memory.

11. The method of claim 7 , wherein the disconnected memory array of the memory devices is electrically isolated from the memory controller.

12. A method for operating a memory device, the method comprising:

processing a command, having at least a memory device address, from a processor to a memory controller; and

selecting, based on the memory device address of the command, a particular memory device (M 1 ) from a plurality of interconnected memory devices (Mn) by transmitting a signal from the memory controller directly via a conducting line to a switch within the particular memory device; and wherein;

in response to directly transmitting the signal to the switch, a memory array of the particular memory device is connected to the memory controller and a memory array of each memory device other than the particular memory device is disconnected from the memory controller;

the particular memory device is electrically connected indirectly via bidirectional interconnections to the memory controller through another memory device between the memory controller and the particular memory device; and

the conducting line is not connected to the bidirectional interconnections.

13. The method of claim 12 , wherein the plurality of interconnected memory devices are incorporated into a computer, a cell phone, a personal data assistant, a data logger, or navigational equipment.

14. The method of claim 12 , wherein each of the plurality of interconnected memory devices comprises the switch further configured for connecting and disconnecting each of the plurality of interconnected memory devices.

15. The method of claim 12 , wherein each of the plurality of interconnected memory devices comprises the switch further configured for connecting a frontside bidirectional interconnection interface to a backside bidirectional interconnection interface.

16. The method of claim 12 , wherein each of the plurality of interconnected memory devices comprises the switch further configured for buffering signals.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Continuity (2)
Continuation 13194859 · Jul 29, 2011
Related Publication 20150199133A1 · Jul 16, 2015