Method of forming a trench in a semiconductor device
A method to make a semiconductor device, a first SiO 2 layer and a first Si 3 N 4 layer are sequentially formed on the semiconductor substrate. The first SiO 2 layer and the first Si 3 N 4 layer are then patterned as etching mask to form a trench in a semiconductor substrate by a trench etching process. After this, a second SiO 2 layer and a second Si 3 N 4 layer are formed conformal onto the substrate. Anisotropic etching is then performed to remove the second Si 3 N 4 and second SiO 2 layer except on the trench sidewall. Then a thermal oxidation process is done to grow oxide only in trench bottom and at trench top corner. The radius of curvature of trench bottom and trench top corner is increased at the same time by this thermal oxidation process.
1. A method of forming a trench in a semi-conductor substrate, the method comprising the steps of:
a) providing a semiconductor substrate with a planar surface with a first SiO2 layer disposed on the planar surface thereof, and a first Si3N4 layer on the first SiO2 layer,
b) patterning the first SiO2 layer and the first Si3N4 layer by lithography and etching;
c) etching a trench into the substrate using the first SiO2 layer and a first Si3N4 layer as an etching mask;
d) depositing a second SiO2 conformal layer on the side of the substrate having the trench,
e) depositing a second Si3N4 conformal layer on the side of the substrate having the trench,
f) anisotropically etching the side of the substrate having the trench to remove the second Si3N4 layer and the second SiO2 layer on substrate surfaces that are parallel to the planar substrate surface wherein the trench sidewall retain at least a portion of the second Si3N4 layer and the second SiO2 layer,
g) thermally oxidizing the side of the substrate having the trench to an extent necessary to grow thermal oxide in a trench bottom and at a trench top corner;
h) removing all Si3N4 layers and SiO2 layers.
2. The method of claim 1 , wherein the semiconductor substrate material is selected from the group consisting of silicon and silicon carbide.
3. The method of claim 1 wherein said step of anisotropically etching the side of the substrate having the trench to remove the second Si3N4 layer and the second SiO2 layer on substrate surfaces that are parallel to the planar substrate surface provides for the entire trench sidewalls to remain protected from oxidation in step g) by the second Si3N4 layer and the second SiO2 layer.
4. The method of claim 1 wherein said step of anisotropically etching the side of the substrate having the trench to remove the second Si3N4 layer and the second SiO2 layer on substrate surfaces that are parallel to the planar substrate surface exposes a junction of the first and second SiO2 layers.
5. The method of claim 1 wherein said step g) of thermally oxidizing the side of the substrate having the trench to an extent necessary to grow thermal oxide in a trench bottom and at a trench top corner occurs after said step f) of anisotropically etching the side of the substrate having the trench to remove the second Si3N4 layer and the second SiO2 layer on substrate surfaces that are parallel to the planar substrate surface wherein the trench sidewall retain at least a portion of the second Si3N4 layer and the second SiO2 layer.
6. The method of claim 1 wherein said step g) of thermally oxidizing the side of the substrate having the trench to an extent necessary to grow thermal oxide in a trench bottom and at a trench top corner occurs immediately after said step f) of anisotropically etching the side of the substrate having the trench to remove the second Si3N4 layer and the second SiO2 layer on substrate surfaces that are parallel to the planar substrate surface wherein the trench sidewall retain at least a portion of the second Si3N4 layer and the second SiO2 layer.
7. The method of claim 1 wherein said step of etching a trench into the substrate using the first SiO2 layer and a first Si3N4 layer as an etching mask form a round bottom of the resulting trench.
8. The method of claim 7 wherein said step of etching a trench into the substrate using the first SiO2 layer and a first Si3N4 layer as an etching mask form a trench with a bottom having radius that half the width of the trench.
9. The method of claim 1 wherein substrate is silicon and the silicon at a trench corner is consumed by growing SiO2 in step g) causing the first Si3N4 layer at the trench corner to lift away from first Si3N4 layer on the trench sidewalls.
10. The method of claim 1 wherein the step of thermally oxidizing in step g) expand the trench radius by at least about 50%.
11. The method of claim 1 wherein the resulting trench has a depth of about 5 microns and a width of about 0.8 microns.