Dynamic switch scaling for switched-mode power converters
Techniques for optimizing the trade-off between minimizing switching losses and minimizing conduction losses in a buck converter. In an aspect, each of a high-side switch and a low-side switch may be implemented as a plurality of parallel-coupled transistors, each transistor having an independently controllable gate voltage, allowing adjustment of the effective transistor size. In response to the target voltage of the buck converter corresponding to a relatively high voltage range, more high-side switch transistors and fewer low-side switch transistors may be selected. Similarly, in response to the target voltage corresponding to a relatively low voltage range, more low-side switch transistors and fewer high-side switch transistors may be selected. In an aspect, the techniques may be applied during a pulse-frequency modulation mode.
1. An apparatus comprising:
a plurality of parallel-coupled PMOS transistors that couple a source voltage to an inductor;
a plurality of parallel-coupled NMOS transistors that couple the inductor to ground, wherein the inductor is coupled to provide an output voltage that is driven to a target output voltage; and
a control logic block that generates a plurality of gate control voltages that control each of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors based on the target output voltage,
wherein in response to the target output voltage being adjusted, the control logic block adjusts a quantity of either or both of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors that are selectively enabled,
wherein in response to the target output voltage being decreased, the control logic block increases the quantity of the plurality of parallel-coupled NMOS transistors that are selectively enabled.
2. The apparatus of claim 1 , wherein the control logic block comprises a decode table that stores a mapping between each of a plurality of voltage ranges and corresponding gate control voltages for the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors.
3. The apparatus of claim 1 , wherein in response to the target output voltage being adjusted, the control logic block adjusts the quantity of either the plurality of parallel-coupled PMOS transistors or the plurality of parallel-coupled NMOS transistors that are selectively enabled but not the quantity of both of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors.
4. The apparatus of claim 1 , wherein in response to the target output voltage being adjusted, the control logic block adjusts the quantity of both the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors that are selectively enabled.
5. The apparatus of claim 1 , wherein in response to the target output voltage being increased, the control logic block increases the quantity of the plurality of parallel-coupled PMOS transistors that are selectively enabled.
6. The apparatus of claim 1 , wherein the plurality of parallel-coupled PMOS transistors comprise a high-side switch, wherein a size of the high-side switch is determined according to the quantity of the plurality of parallel-coupled PMOS transistors that are selectively enabled.
7. The apparatus of claim 1 , wherein the plurality of parallel-coupled NMOS transistors comprise a low-side switch, wherein a size of the low-side switch is determined according to the quantity of the plurality of parallel-coupled NMOS transistors that are selectively enabled.
8. The apparatus of claim 1 , wherein the plurality of parallel-coupled PMOS transistors each have an identical size.
9. The apparatus of claim 1 , wherein the plurality of parallel-coupled NMOS transistors each have an identical size.
10. The apparatus of claim 1 , wherein the plurality of parallel-coupled PMOS transistors has a plurality of sizes according to a binary-weighted scheme.
11. The apparatus of claim 1 , wherein the plurality of parallel-coupled NMOS transistors has a plurality of sizes according to a binary-weighted scheme.
12. The apparatus of claim 1 , wherein a number of the plurality of parallel-coupled PMOS transistors equals a number of the plurality of parallel-coupled NMOS transistors.
13. The apparatus of claim 1 , wherein a number of the plurality of parallel-coupled PMOS transistors differs from a number of the plurality of parallel-coupled NMOS transistors.
14. The apparatus of claim 1 , wherein the plurality of parallel-coupled PMOS transistors comprise a high-side switch, wherein the plurality of parallel-coupled NMOS transistors comprise a low-side switch, and wherein the control logic block controls a driving capability of at least one of the high-side switch and the low-side switch based on the target output voltage to which the output voltage is driven.
15. The apparatus of claim 1 , wherein the plurality of parallel-coupled PMOS transistors operates according to pulse frequency modulation, wherein the control logic block increases the quantity of the plurality of parallel-coupled PMOS transistors in response to the target voltage being in a high voltage range, and wherein the control logic block decreases the quantity of the plurality of parallel-coupled PMOS transistors in response to the target output voltage being in a low voltage range lower than the high voltage range.
16. The apparatus of claim 1 , wherein the plurality of parallel-coupled NMOS transistors operates according to pulse frequency modulation, wherein the control logic block increases the quantity of the plurality of parallel-coupled NMOS transistors in response to the target voltage being in a low voltage range, and wherein the control logic block decreases the quantity of the plurality of parallel-coupled NMOS transistors in response to the target output voltage being in a high voltage range higher than the low voltage range.
17. The apparatus of claim 1 , wherein the control logic block adjusts the quantity of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors that are selectively enabled based on the target output voltage during a low-current mode of the apparatus.
18. A method, comprising:
providing a plurality of parallel-coupled PMOS transistors that couple a source voltage to an inductor;
providing a plurality of parallel-coupled NMOS transistors that couple the inductor to ground, wherein the inductor is coupled to an output voltage that is driven to a target output voltage;
providing a control logic block coupled to the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors;
generating, by the control logic block, a plurality of gate control voltages that control each of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors; and
adjusting, by the control logic block in response to the target output voltage being adjusted, a quantity of the plurality of parallel-coupled PMOS transistors and the plurality of parallel-coupled NMOS transistors that are selectively enabled,
wherein in response to the target output voltage being decreased, the control logic block increases the quantity of the plurality of parallel-coupled NMOS transistors that are selectively enabled.