Clock delay detecting circuit and semiconductor apparatus using the same

1. A semiconductor apparatus comprising:

a delay-locked loop unit configured to delay an input clock and to generate a delay clock;

a counting control unit configured to generate a counting control signal and a counting enable signal based on the counting control signal, the counting enable signal being enabled with a duration longer than a sum of a first delay time and a second delay time;

a command delay line configured to delay the counting control signal by the first delay time and to generate a delay command signal;

a counting unit configured to generate a delay information signal by counting the counting enable signal with the delay clock; and

an output control unit configured to generate an output control signal by delaying the delay command signal based on the delay information signal and a latency.

2. The semiconductor apparatus of claim 1 , wherein the delay-locked loop unit includes a clock delay line configured to delay the input clock by the first delay time.

3. The semiconductor apparatus of claim 1 , wherein the first delay time corresponds to a time interval of a delay that an external clock experiences in the semiconductor apparatus subtracted from n multiples of the input clock, n being greater than 1.

4. The semiconductor apparatus of claim 1 , wherein the counting control unit includes:

a replica delay unit configured to delay the delay command signal by the second delay time and to generate a trigger control signal;

a triggering unit configured to generate the counting control signal in response to a count start signal and the trigger control signal; and

a period signal dividing unit configured to generate the counting enable signal by dividing the counting control signal.

5. The semiconductor apparatus of claim 1 , wherein the output control unit includes:

a latency control unit configured to generate a corrected latency by subtracting a code value corresponding to the delay information signal from the latency; and

a shifting unit configured to generate the output enable signal by delaying the command delay signal by multiples of a clock that correspond to the corrected latency.

6. A Semiconductor apparatus comprising:

a counting control unit configured to generate a counting control signal based on a delay lock completion signal, and generate a counting enable signal based on the counting control signal, the counting enable signal being enabled with a duration longer than a sum of a first delay time and a sum of a first delay time and a second delay time;

a counting unit configured to generate a delay information signal by counting the counting enable signal with a delay clock;

a command delay line configured to delay the counting control signal by the first delay time and to generate a delay command signal;

an output control unit configured to generate an output control signal by delaying the delay command signal based on the delay information signal and a latency.

7. The semiconductor memory apparatus of claim 6 , further comprising:

a delay-locked loop unit configured to delay an input clock and to generate the delay clock and the delay lock completion signal.

8. The semiconductor memory apparatus of claim 7 , wherein the delay-locked loop unit includes a clock delay line configured to delay the input clock by the first delay time.

9. The semiconductor memory apparatus of claim 8 , wherein the first delay time corresponds to a time interval of a delay that an external clock experiences in the semiconductor apparatus subtracted from n multiples of the input clock, n being an integer greater than 1.

10. The semiconductor apparatus of claim 8 , wherein the counting control unit includes:

a replica delay unit configured to delay the delay command signal by the second delay time and to generate a trigger control signal;

a triggering unit configured to generate the counting control signal in response to the delay lock completion signal and the trigger control signal; and

a period signal dividing unit configured to generate the counting enable signal by dividing the counting control signal.

11. A Semiconductor apparatus comprising:

a counting control unit configured to generate a counting control signal, which oscillates with a period of time interval corresponding to first and second delay times that a sum of the first and second delay time is n times a period of clock, n being an integer greater than 1, based on a delay lock completion signal, and to enable a counting enable signal based on the counting control signal during m multiples of the first and second delay times, m being an integer greater than 2;

a counting unit configured to generate a delay information signal by counting the counting enable signal with a delay clock;

a command delay line configured to delay the counting control signal by the first delay time to generate a delay command signal;

an output control unit configured to generate an output control signal by delaying the delay command signal based on the delay information signal and a latency.

12. The semiconductor apparatus of claim 11 , further comprising:

a delay-locked loop unit configured to delay an input clock by the first delay time to generate the delay clock and the delay lock completion signal.

13. The semiconductor apparatus of claim 12 , wherein the first delay time corresponds to a time interval of a delay that an external clock experiences in the semiconductor apparatus subtracted from n multiples of the input clock, m being an integer greater than 1.

14. The semiconductor apparatus of claim 11 , wherein the counting control unit includes:

a replica delay unit configured to delay the delay command signal by the second delay time and to generate a trigger control signal;

a triggering unit configured to generate the counting control signal in response to the delay lock completion signal and the trigger control signal; and

a period signal dividing unit configured to generate the counting enable signal by dividing the counting control signal.