IP Library › Granted Patent US 9,613,917
Granted Patent B2
US 9,613,917 · App. 13/435,809 · Granted Apr 4, 2017

Package-on-package (PoP) device with integrated passive device in a via

Inventors: Ching-Wen Hsiao (Hsin-Chu, TW); Chen-Shien Chen (Zhubei, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L23/642H01L21/486H01L23/147H01L23/49822H01L23/49827H01L23/5389H01L25/105H01L23/49816H01L28/20H01L28/90H01L2224/16227H01L2224/16235H01L2224/32225H01L2224/73204H01L2225/06513H01L2225/06517H01L2225/06541H01L2225/06565H01L2225/1023H01L2225/1041H01L2225/1058H01L2924/15311H01L2924/19041H01L2924/19105
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Quick Facts
Patent No.
US 9,613,917
App. No.
13/435,809
Granted
Apr 4, 2017
Kind
B2
Abstract

A package for a use in a package-on-package (PoP) device. The package includes a substrate, a polymer layer formed on the substrate, a first via formed in the polymer layer, and a material disposed in the first via to form a first passive device. The material may be a high dielectric constant dielectric material in order to form a capacitor or a resistive material to form a resistor.

Claims (33)

1. A package for a use in a package-on-package (PoP) device, comprising:

a substrate;

a polymer layer formed on the substrate;

a first via formed in the polymer layer, the first via having a first sidewall in the polymer layer and a second sidewall in the polymer layer, the first sidewall facing the second sidewall;

a non-conductive material disposed in the first via to form a first passive device, an uppermost surface of the non-conductive material engaging a passivation layer, the passivation layer extending over from the first sidewall to the second sidewall of the polymer layer; and

a first contact and a second contact, the passivation layer and the first passive device being interposed between the first contact and the second contact.

2. The PoP device of claim 1 , wherein the first passive device is at least partially disposed within the first via.

3. The PoP device of claim 1 , wherein the first passive device comprises first and second contacts on opposing sides of the non-conductive material disposed in the first via.

4. The PoP device of claim 1 , wherein the non-conductive material is a dielectric material forming at least one of a capacitor and a resistor.

5. A package for a use in a package-on-package (PoP) device, comprising:

a substrate;

a polymer layer formed on the substrate;

a first via formed in extending from a first side of the polymer layer to a second side of the polymer layer;

a first contact on the first side of the polymer layer;

a second contact on the second side of the polymer layer, wherein the polymer layer is interposed between first contact and the second contact; and

a material disposed in the first via to form a first passive device electrically interposed between the first contact and the second contact, a non-conducting layer extending over and contacting an uppermost surface of the polymer layer and an uppermost surface of the material.

6. The package of claim 5 , wherein the material is a dielectric material and the first passive device is a capacitor.

7. The package of claim 6 , wherein the polymer layer includes a plurality of additional vias filled with the dielectric material to form a plurality of additional capacitors, the capacitor and the additional capacitors electrically coupled together.

8. The package of claim 5 , wherein the material is a resistive material and the first passive device is a resistor.

9. The package of claim 5 , wherein the polymer layer comprises an organic polyimide.

10. The package of claim 5 , wherein the polymer layer comprises an epoxy.

11. The package of claim 5 , wherein the polymer layer includes a second via filled with the material to form a second passive device.

12. The package of claim 5 , wherein the polymer layer encapsulates a logic chip mounted on the substrate.

13. A package-on-package (PoP) device, comprising:

a top package; and

a bottom package operably coupled to the top package, the bottom package including a substrate supporting a polymer layer, the polymer layer including a first via filled with a first material to form a first passive device, the first material engaging a non-conducting layer extending over the polymer layer, an upper surface of the first material being coplanar with an upper surface of the polymer layer, wherein the first material is a first dielectric material and the first passive device is a first capacitor, and wherein a top surface of the first dielectric material is electrically coupled to a first contact and a bottom surface of the first dielectric material is electrically coupled to a second contact.

14. The PoP device of claim 13 , wherein the polymer layer includes a second via filled with the first dielectric material to form a second capacitor.

15. The PoP device of claim 13 , wherein the polymer layer includes a plurality of additional vias filled with the first dielectric material to form a plurality of additional capacitors, the additional capacitors are electrically coupled together.

16. The PoP device of claim 13 , wherein the first material is a first dielectric material and the first passive device is a first capacitor, and wherein the polymer layer includes a second via filled with a second dielectric material to form a second capacitor, the first dielectric material different from the second dielectric material such that the first and second capacitors each provide a different capacitance.

17. The PoP device of claim 13 , wherein the top package incorporates a memory chip.

18. The PoP device of claim 13 , wherein the bottom package incorporates a logic chip encapsulated by the polymer layer.

19. The PoP device of claim 13 , wherein the second contact comprises a conductive material extending along sidewalls of the first via, the conductive material being interposed between the first dielectric material and the polymer layer.

20. The PoP device of claim 19 , wherein an upper surface of the conductive material is level with an upper surface of the first dielectric material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2012
From: HSIAO, CHING-WEN; CHEN, CHEN-SHIEN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
Reel/Frame 028084/0674 →
Continuity (1)
Related Publication 20130256836A1 · Oct 3, 2013