Semiconductor device and manufacturing method thereof
View Patent ↗The present invention provides a transistor having electrically stable characteristics. In addition, the reliability of a semiconductor device including such a transistor is increased. The semiconductor device includes a gate electrode layer, a gate insulating film over the gate electrode layer, an oxide semiconductor stacked film overlapping with the gate electrode layer with the gate insulating film provided therebetween, and a pair of electrode layers in contact with the oxide semiconductor stacked film. In the semiconductor device, the oxide semiconductor stacked film includes at least indium and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked. Further, the first oxide semiconductor layer has an amorphous structure, the second oxide semiconductor layer and the third oxide semiconductor layer include a crystal part whose c-axis is substantially perpendicular to a top surface of the oxide semiconductor stacked film.
1. A display device comprising:
a gate electrode layer;
a first insulating layer over the gate electrode layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a third oxide semiconductor layer over the second oxide semiconductor layer, wherein the third oxide semiconductor layer covers side surfaces in end portions of the first oxide semiconductor layer and side surfaces in end portions of the second oxide semiconductor layer;
a source electrode layer and a drain electrode layer on and in contact with the third oxide semiconductor layer;
a second insulating layer over the source electrode layer and the drain electrode layer; and
a pixel electrode electrically connected to the source electrode layer and the drain electrode layer,
wherein the second oxide semiconductor layer comprises indium, gallium, and zinc, and
wherein the second oxide semiconductor layer and the third oxide semiconductor layer comprise crystals.
2. The display device according to claim 1 , wherein a c-axis of the crystals is aligned in a direction substantially parallel to a normal vector of a formation surface.
3. The display device according to claim 1 ,
wherein the first oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the third oxide semiconductor layer comprises indium, gallium, and zinc, and
wherein a proportion of indium in the second oxide semiconductor layer is higher than a proportion of indium in the first oxide semiconductor layer or a proportion of indium in the third oxide semiconductor layer.
4. The display device according to claim 1 , wherein the pixel electrode is connected to the source electrode layer or the drain electrode layer through an opening in the second insulating layer.
5. The display device according to claim 1 , wherein a concentration of silicon in the first oxide semiconductor layer and the third oxide semiconductor layer is lower than or equal to 3×10 18 /cm 3 .
6. A display device comprising:
a gate electrode layer;
a first insulating layer over the gate electrode layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer, wherein end portions of the second oxide semiconductor layer have tapered side surfaces;
a third oxide semiconductor layer over the second oxide semiconductor layer, wherein the third oxide semiconductor layer covers the tapered side surfaces of the second oxide semiconductor layer;
a source electrode layer and a drain electrode layer on and in contact with the third oxide semiconductor layer, the source electrode layer and the drain electrode layer comprising copper;
a second insulating layer over the source electrode layer and the drain electrode layer; and
a pixel electrode electrically connected to the source electrode layer and the drain electrode layer,
wherein the second oxide semiconductor layer comprises indium, gallium, and zinc.
7. The display device according to claim 6 , wherein the second oxide semiconductor layer has a crystalline structure in which a c-axis of crystals is aligned in a direction substantially parallel to a normal vector of a formation surface.
8. The display device according to claim 6 ,
wherein the first oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the third oxide semiconductor layer comprises indium, gallium, and zinc, and
wherein a proportion of indium in the second oxide semiconductor layer is higher than a proportion of indium in the first oxide semiconductor layer or a proportion of indium in the third oxide semiconductor layer.
9. The display device according to claim 6 , wherein the pixel electrode is connected to the source electrode layer or the drain electrode layer through an opening in the second insulating layer.
10. The display device according to claim 6 , wherein a concentration of silicon in the first oxide semiconductor layer and the third oxide semiconductor layer is lower than or equal to 3×10 18 /cm 3 .
11. A display device comprising:
a gate electrode layer;
a first insulating layer over the gate electrode layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a third oxide semiconductor layer over the second oxide semiconductor layer, wherein the third oxide semiconductor layer covers side surfaces of the first oxide semiconductor layer and side surfaces of the second oxide semiconductor layer;
a source electrode layer and a drain electrode layer on and in contact with the third oxide semiconductor layer;
a second insulating layer over the source electrode layer and the drain electrode layer; and
a pixel electrode electrically connected to the source electrode layer and the drain electrode layer,
wherein the second oxide semiconductor layer and the third oxide semiconductor layer comprise crystals,
wherein the gate electrode overlaps with the source electrode layer and the drain electrode layer, and
wherein a bottom of a conduction band in the second oxide semiconductor layer is deeper and farther from a vacuum level than a bottom of a conduction band in the first oxide semiconductor layer and a bottom of a conduction band in the third oxide semiconductor layer.
12. The display device according to claim 11 , wherein a c-axis of the crystals is aligned in a direction substantially parallel to a normal vector of a formation surface.
13. The display device according to claim 11 , wherein the side surfaces of the first oxide semiconductor layer and the side surfaces of the second oxide semiconductor layer are tapered.
14. The display device according to claim 11 ,
wherein the first oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the third oxide semiconductor layer comprises indium, gallium, and zinc, and
wherein a proportion of indium in the second oxide semiconductor layer is higher than a proportion of indium in the first oxide semiconductor layer or a proportion of indium in the third oxide semiconductor layer.
15. The display device according to claim 11 , wherein the pixel electrode is connected to the source electrode layer or the drain electrode layer through an opening in the second insulating layer.
16. The display device according to claim 11 , wherein a concentration of silicon in the first oxide semiconductor layer and the third oxide semiconductor layer is lower than or equal to 3×10 18 /cm 3 .