Semiconductor structures and die assemblies including conductive vias and thermally conductive elements and methods of forming such structures
A semiconductor structure comprises conductive vias extending from an active surface of a substrate to a back side of the substrate and surrounded by a dielectric material. The conductive vias are surrounded by recessed isolation structures formed within the back side of the substrate. Conductive elements extend over the conductive vias and laterally over at least portions of the isolation structures. The conductive elements are in electrical contact with the conductive vias and electrically isolated from the substrate by the isolation structures. Thermally conductive elements in contact with the substrate are laterally spaced from the conductive elements. Die assemblies comprising the semiconductor structure, methods of forming the semiconductor structure, and methods of forming the die assemblies are also disclosed.
1. A semiconductor structure, comprising:
a conductive via extending from an active surface of a substrate to a back side of the substrate;
a dielectric material on a sidewall of the conductive via;
an isolation structure comprising an insulating material in a recess in the back side of the substrate and surrounding a portion of the conductive via; and
a conductive material over and in contact with the conductive via and directly over and in contact with at least a portion of the insulating material of the isolation structure, the conductive material in electrical isolation from the substrate, the conductive material extending from over the conductive via to directly over at least a portion of the isolation structure.
2. The semiconductor structure of claim 1 , wherein the conductive material comprises a pad.
3. The semiconductor structure of claim 1 , wherein the isolation structure further comprises a barrier material on a side of the dielectric material, a portion of the barrier material located between the dielectric material and the insulating material and another portion of the barrier material located between the substrate and the insulating material.
4. The semiconductor structure of claim 1 , wherein the isolation structure extends laterally further from the conductive via than the conductive material, the insulating material in contact with a lower portion of the conductive material.
5. The semiconductor structure of claim 1 , further comprising a thermally conductive material in contact with the back side of the substrate and electrically isolated from the conductive material.
6. The semiconductor structure of claim 5 , wherein the thermally conductive material and the conductive material comprise the same material.
7. The semiconductor structure of claim 1 , wherein at least a portion of the dielectric material is between the conductive via and the insulating material.
8. The semiconductor structure of claim 1 , wherein the conductive material comprises an undersurface that is substantially coplanar with a surface of the back side of the substrate.
9. The semiconductor structure of claim 1 , wherein the conductive material directly overlies and contacts the insulating material and the dielectric material.
10. A semiconductor structure, comprising:
a substrate having active circuitry on a front side thereof;
at least one conductive structure on a back side of the substrate and electrically connected to the active circuitry;
an insulating material in a recess in the back side of the substrate and in contact with the at least one conductive structure;
a barrier material on sidewalls and a lower portion of the recess, the insulating material over the barrier material in the recess; and
a thermally conductive element in contact with the back side of the substrate and electrically isolated from the at least one conductive structure.
11. The semiconductor structure of claim 10 , wherein the at least one conductive structure and the thermally conductive element comprise the same material.
12. The semiconductor structure of claim 10 , wherein the at least one conductive structure is electrically connected to the active circuitry with a conductive via integral with a conductive pillar protruding from the front side of the substrate.
13. The semiconductor structure of claim 12 , wherein the conductive via and the conductive pillar comprise copper, the conductive pillar is capped with nickel, and a solder material is located on the nickel.
14. The semiconductor structure of claim 13 , further comprising a dielectric material surrounding the conductive via and extending between the conductive via and the insulating material.
15. The semiconductor structure of claim 10 , wherein the at least one conductive structure comprises a plurality of conductive structures and the insulating material recessed within the back side of the substrate and in contact with the at least one conductive structure contacts the plurality of conductive structures on the back side of the substrate.
16. A semiconductor die assembly, comprising:
a stack of semiconductor dice;
conductive structures in contact with conductive vias extending through substrates of the semiconductor dice in the stack, the conductive structures extending between semiconductor dice in the stack;
dielectric material surrounding at least a portion of each of the conductive vias;
isolation structures comprising a barrier material and an insulation material within the substrates of semiconductor dice in the stack, the isolation structures surrounding one or more of the conductive vias adjacent a substrate surface and in contact with a portion of the dielectric material surrounding each of the conductive vias, the barrier material in contact with the insulation material and the substrate;
conductive elements over the substrate surface in contact with the conductive vias and the conductive structures and directly over at least a Portion of the isolation structures; and
at least one thermally conductive structure extending from a semiconductor die in the stack in contact with a thermally conductive element on a same substrate surface of an adjacent semiconductor die in the stack as the conductive elements of the adjacent semiconductor die.
17. The semiconductor die assembly of claim 16 , wherein the at least one thermally conductive structure comprises a metal and a thermal interface material in contact with a substrate of the semiconductor die, the thermal interface material comprising an adhesive, an elastomer, a thermal pad, or a phase change thermal interface material.
18. The semiconductor die assembly of claim 16 , wherein the at least one thermally conductive structure extends through a substrate of the semiconductor die and is electrically isolated from the conductive structures.
19. The semiconductor die assembly of claim 16 , wherein the conductive structures comprise conductive pillars integral with the conductive vias and a solder material.
20. The semiconductor die assembly of claim 16 , wherein a portion of the barrier material is between and in contact with the insulation material and the substrate and another portion of the barrier material is between and in contact with the insulation material and the dielectric material.
21. A method, comprising:
forming at least one conductive via extending from an active surface of a substrate to a back surface of the substrate;
forming a dielectric material on a sidewall of the at least one conductive via;
forming a recess within the back surface of the substrate adjacent the at least one conductive via;
forming an isolation structure comprising an insulating material over the back surface and within the recess and surrounding a portion of the at least one conductive via;
removing the insulating material from the back surface while leaving the insulating material within the recess; and
forming a conductive element in electrical isolation from the substrate and over and in contact with the at least one conductive via and directly over and in contact with at least a portion of the insulating material, forming the conductive element comprising forming the conductive element to extend from over the at least one conductive via to directly over at least a portion of the isolation structure.
22. The method of claim 21 , wherein forming a recess within the back surface of the substrate comprises removing semiconductor material of the substrate from around the conductive via.
23. The method of claim 21 , wherein forming the recess adjacent the at least one conductive via comprises forming the recess to surround the at least one conductive via.
24. The method of claim 21 , wherein:
forming at least one conductive via extending from an active surface of a substrate to a back surface of the substrate comprises forming a plurality of conductive vias extending from the active surface of the substrate to the back surface of the substrate; and
forming a recess within the back surface of the substrate adjacent the at least one conductive via comprises forming the recess adjacent the plurality of conductive vias.
25. The method of claim 21 , wherein removing the insulating material from the back surface comprises removing a portion of the dielectric material over an end of the at least one conductive via adjacent the back surface to expose the end of the at least one conductive via.
26. The method of claim 21 , wherein forming a conductive element in electrical isolation from the substrate and over and in contact with the at least one conductive via comprises forming a conductive material over the back surface, forming a patterned photoresist over the conductive material, and forming another conductive material through the patterned photoresist and over the conductive material.
27. The method of claim 21 , further comprising forming a barrier material over the back surface and within the recess prior to forming the insulating material.
28. The method of claim 21 , further comprising forming a thermally conductive element on the back surface, laterally spaced from the conductive element and in contact with the substrate.
29. A method, comprising:
forming a stack of semiconductor dice;
forming conductive structures extending between semiconductor dice in the stack and in contact with conductive vias extending through substrates of the semiconductor dice in the stack;
forming a dielectric material surrounding at least a portion of each of the conductive vias;
forming isolation structures comprising a barrier material and an insulation material surrounding one or more of the conductive vias adjacent a substrate surface and in contact with a portion of the dielectric material surrounding each of the conductive vias within substrates of semiconductor dice in the stack, and wherein forming the barrier material comprises forming the barrier material in contact with the insulation material and the substrate;
forming conductive elements in contact with the conductive vias and over the substrate surface and directly over at least a portion of the recessed isolation structures; and
forming at least one thermally conductive structure extending from a semiconductor die in the stack in contact with a thermally conductive element on a same substrate surface of an adjacent semiconductor die in the stack as the conductive elements of the adjacent semiconductor dice.
30. The method of claim 29 , wherein forming isolation structures comprising a barrier material and an insulation material comprises forming a barrier material within recesses in back sides of the semiconductor dice and filling the recesses with an insulating material.