LDMOS finFET device and method of manufacture using a trench confined epitaxial growth process

1. A method for manufacturing a FinFET transistor, comprising:

forming a fin of semiconductor material;

forming a transistor gate structure extending over a channel region of said fin;

epitaxially growing first epitaxial growth material on a top of said fin on a first side and second side of the transistor gate electrode to form a raised source region and a raised drain region, respectively;

depositing a pre-metallization dielectric material to cover the raised source region, transistor gate electrode and raised drain region;

extending a source contact opening through the pre-metallization dielectric material to said raised source region;

extending a drain contact opening through the pre-metallization dielectric material to said raised drain region;

epitaxially growing second epitaxial growth material at a bottom of the source and drain contact openings to extend from said first epitaxial growth material to form a source contact region and a drain contact region, respectively; and

filling the source and drain contact openings with metal to form source and drain contacts, respectively, with the source and drain contact regions;

wherein the first epitaxial growth material is doped with a first concentration and wherein said second epitaxial growth material is doped with a second concentration, said second concentration being higher than said first concentration.

2. The method of claim 1 , wherein forming the transistor gate structure comprises:

forming a dummy gate structure;

removing the dummy gate structure after deposition of the pre-metallization dielectric material;

replacing the removed dummy gate structure with a metal gate electrode.

3. The method of claim 1 , wherein forming the fin further comprises:

forming a first recess region at the top of the fin adjacent the channel region at the first side of the transistor gate electrode; and

forming a second recess region at the top of the fin adjacent the channel region at the second side of the transistor gate electrode.

4. The method of claim 3 , wherein epitaxially growing first epitaxial growth material comprises filling said first and second recess regions with first epitaxial growth material.

5. The method of claim 1 , further comprising offsetting the drain contact region of said second epitaxial growth material from the second side of the transistor gate electrode by an offset distance to provide with said raised source region of first epitaxial growth material a laterally diffused metal oxide semiconductor (LDMOS) configuration.

6. The method of claim 2 , further comprising:

in situ doping the first epitaxial growth material to the first concentration; and

in situ doping the second epitaxial growth material to the second concentration.

7. The method of claim 6 , wherein said source and drain contact regions of the second epitaxial growth material exhibit a relatively lower resistivity than the first epitaxial growth material.

8. The method of claim 7 , further comprising offsetting the drain contact region of said second epitaxial growth material from the second side of the transistor gate electrode by an offset distance to provide with said raised source region of first epitaxial growth material a relatively higher resistivity drain region between the channel region and the drain contact region.

9. The method of claim 8 , wherein the relatively higher resistivity drain region forms a laterally diffused metal oxide semiconductor (LDMOS) configuration.

10. The method of claim 1 , wherein extending the source contact opening comprises forming a first recess in said raised source region to form a first recess, and wherein extending the drain contact opening comprises forming a second recess in said raised drain region.

11. The method of claim 10 , wherein epitaxially growing second epitaxial growth material comprises filling the first and second recesses with second epitaxial growth material.

12. A method for manufacturing a FinFET transistor, comprising:

forming a fin of semiconductor material including a fin source region, a fin channel region and a fin drain region;

epitaxially growing first epitaxial growth material on a top of said fin to form a raised source region on the fin source region and a raised drain region on the fin drain region, respectively;

depositing a pre-metallization dielectric material to cover the raised source region and raised drain region;

forming a source contact opening through the pre-metallization dielectric material to said raised source region;

forming a drain contact opening through the pre-metallization dielectric material to said raised drain region; and

epitaxially growing second epitaxial growth material at a bottom of the source and drain contact openings on said first epitaxial growth material to form a source contact region and a drain contact region, respectively;

wherein the first epitaxial growth material is doped with a first concentration and wherein said second epitaxial growth material is doped with a second concentration, said second concentration being higher than said first concentration.

13. The method of claim 12 , wherein forming the fin further comprises:

forming a first recess region on top of the fin at the fin channel region; and

forming a second recess region on top of the fin at the fin channel region.

14. The method of claim 13 , wherein epitaxially growing first epitaxial growth material comprises filling said first and second recess regions with first epitaxial growth material.

15. The method of claim 12 , further comprising:

in situ doping the first epitaxial growth material to the first concentration; and

in situ doping the second epitaxial growth material to the second concentration.

16. The method of claim 12 , wherein said source and drain contact regions of the second epitaxial growth material exhibit a relatively lower resistivity than the first epitaxial growth material.

17. The method of claim 12 , further comprising:

forming a transistor gate structure extending over the fin channel region;

spacing the drain contact opening from a side of the transistor gate electrode by an offset distance sufficient to provide a relatively higher resistivity extension of the drain region between the fin channel region and the drain contact region.

18. The method of claim 17 , wherein the relatively higher resistivity extension of the drain region forms a laterally diffused metal oxide semiconductor (LDMOS) configuration.

19. The method of claim 12 , wherein epitaxially growing second epitaxial growth material comprises filling the first and second recesses with second epitaxial growth material.

20. The method of claim 12 , further comprising depositing metal within the source and drain contact openings to form source and drain contacts, respectively, on the source and drain contact regions.

21. The method of claim 12 , further comprising:

forming a dummy gate structure over the fin channel region;

removing the dummy gate structure after deposition of the pre-metallization dielectric material;

replacing the removed dummy gate structure with a metal gate electrode.

22. The method of claim 12 , wherein forming the source contact opening comprises extending the source contact opening into the top of the raised source region, and wherein forming the drain contact opening comprises extending the drain contact opening into the top of the raised drain region.

23. A method for manufacturing a transistor, comprising:

epitaxially growing first epitaxial growth material on a top of a transistor source region to form a raised source region on the transistor source region and on a top of a transistor drain region to form a raised drain region on the transistor drain region;

depositing a pre-metallization dielectric material to cover the raised source region and raised drain region;

forming a source contact opening through the pre-metallization dielectric material to said raised source region;

forming a drain contact opening through the pre-metallization dielectric material to said raised drain region; and

epitaxially growing second epitaxial growth material at a bottom of the source and drain contact openings on said first epitaxial growth material to form a source contact region and a drain contact region, respectively;

wherein the first epitaxial growth material is doped with a first concentration and wherein said second epitaxial growth material is doped with a second concentration, said second concentration being higher than said first concentration.

24. The method of claim 23 , further comprising:

in situ doping the first epitaxial growth material to the first concentration; and

in situ doping the second epitaxial growth material to the second concentration.

25. The method of claim 23 , wherein said source and drain contact regions of the second epitaxial growth material exhibit a relatively lower resistivity than the first epitaxial growth material.

26. The method of claim 23 , further comprising:

forming a transistor gate structure extending over a channel region between the transistor source and drain regions;

spacing the drain contact opening from a side of the transistor gate electrode by an offset distance sufficient to provide a relatively higher resistivity extension of the drain region between the channel region and the drain contact region.

27. The method of claim 26 , wherein the relatively higher resistivity extension of the drain region forms a laterally diffused metal oxide semiconductor (LDMOS) configuration.

28. The method of claim 23 , wherein epitaxially growing second epitaxial growth material comprises filling the first and second recesses with second epitaxial growth material.

29. The method of claim 23 , further comprising depositing metal within the source and drain contact openings to form source and drain contacts, respectively, on the source and drain contact regions.

30. The method of claim 23 , wherein forming the source contact opening comprises extending the source contact opening into the top of the raised source region, and wherein forming the drain contact opening comprises extending the drain contact opening into the top of the raised drain region.