Thermoelectric cooling packages and thermal management methods thereof
A device includes a first board having a first area and a second area not overlapping the first area; and a thermoelectric semiconductor disposed between the first board and the second board at the first area of the first board configured to supply a voltage to the thermoelectric semiconductor; a package disposed at the second area of the first board.
1. A package-on-package device comprising:
a first package comprising:
a first package substrate,
a thermoelectric cooler embedded within the first package substrate, and
a first chip mounted on the first package substrate, the first chip being a logic chip; and
a second package, disposed on the first package, the second package comprising:
a second package substrate, and
a second chip, mounted on the second package substrate, the second chip being a memory chip,
wherein the thermoelectric cooler comprises p-type semiconductors and n-type semiconductors alternately embedded in the first package substrate and connected in series by a plurality of metal layers,
a first voltage is applied to a bottom surface of the p-type semiconductor located at a first end of the thermoelectric cooler, and
a second voltage is applied to a bottom surface of the n-type semiconductor located at a second end of the thermoelectric cooler.
2. The device of claim 1 , wherein the first voltage is smaller than the second voltage when heat generated by the logic chip is transferred from the logic chip to the first package substrate through the thermoelectric cooler.
3. The device of claim 1 , wherein the first voltage is larger than the second voltage when heat is transferred from the first package substrate to the logic chip through the thermoelectric cooler.
4. The device of claim 1 , wherein each of the plurality of metal layers connects top surfaces of the p-type semiconductors and the n-type semiconductors and the bottom surfaces of the n-type semiconductors and the p-type semiconductors alternately.
5. The device of claim 4 , wherein a first metal layer of the plurality of metal layers connects the top surfaces of the p-type semiconductor located at the first end of the thermoelectric cooler and adjacent n-type semiconductor, and a second metal layer of the plurality of metal layers connects the bottom surfaces of the n-type semiconductor located at the second end of the thermoelectric cooler and adjacent p-type semiconductor.
6. The device of claim 1 , wherein the logic chip is an application processor (AP).
7. The device of claim 1 , wherein the logic chip includes a temperature sensor which detects a temperature of the logic chip, and adjusts at least one among the first voltage and the second voltage in response to the detected temperature.
8. The device of claim 1 , wherein the first package substrate includes a temperature sensor which detects temperature of the first package, and adjusts at least one among the first voltage and the second voltage in response to the detected temperature.
9. The device of claim 1 , wherein the memory chip is a dynamic random access memory (DRAM).
10. The device of claim 1 , further including a second thermoelectric semiconductor, the second thermoelectric semiconductor being mounted on the memory chip.
11. The device of claim 1 , further including a heat sink disposed adjacent to the first package substrate.
12. The device of claim 1 , further including a controller which adjusts at least one among the first voltage and the second voltage so that the thermoelectric cooler operates if a temperature of the package is above a predetermined temperature and the thermoelectric cooler does not operate if the temperature is below the predetermined temperature.
13. The device of claim 12 , wherein the predetermined temperature is about 45° C.
14. A package-on-package device comprising:
a first package comprising:
a first package substrate,
a thermoelectric cooler embedded within the first package substrate, and
a first chip mounted on the first package substrate, the first chip being a logic chip, wherein the logic chip includes a temperature sensor; and
a second package disposed on the first package comprising:
a second package substrate, and
a second chip, mounted on the second package substrate, the second chip being a memory device,
wherein the thermoelectric cooler comprises p-type semiconductors and n-type semiconductors alternately embedded in the first package substrate and connected in series by a plurality of metal layers,
a first voltage is applied to a bottom surface of the p-type semiconductor located at a first end of the thermoelectric cooler,
a second voltage is applied to a bottom surface of the n-type semiconductor located at a second end of the thermoelectric cooler, and
the temperature sensor detects temperature of the logic chip, and adjusts at least one among the first voltage and the second voltage in response to the detected temperature.
15. The device of claim 14 , wherein the logic chip is an application processor (AP).
16. The device of claim 14 , wherein the memory chip is a dynamic random access memory (DRAM).
17. The device of claim 14 , wherein the first voltage is smaller than the second voltage when heat generated by the logic chip is transferred from the logic chip to the first package substrate through the thermoelectric cooler.
18. A system-in-package device comprising:
a first package substrate;
a thermoelectric cooler embedded within the first package substrate;
a first chip mounted on the first package substrate, the first chip being a logic chip, wherein the logic chip includes a temperature sensor; and
a second chip disposed over the first chip and coupled to the first chip, wherein the second chip is a memory device,
wherein the thermoelectric cooler comprises a plurality of p-type semiconductors, a plurality of n-type semiconductors alternately embedded within the first package substrate and connected in series with a plurality of metal layers, and a first voltage is applied to surface of the p-type semiconductor located at first end of the thermoelectric cooler and a second voltage is applied to surface of the n-type semiconductor located at second end of the thermoelectric cooler.
19. The device of claim 18 , wherein the logic chip is an application processor (AP).
20. The device of claim 18 , wherein the first voltage is smaller than the second voltage when heat generated by the logic chip is transferred from the logic chip to the first package substrate through the thermoelectric cooler.