Methods for forming a cobalt-ruthenium liner layer for interconnect structures
Methods for forming a liner layer are provided herein. In some embodiments, a method of forming a liner layer on a substrate disposed in a process chamber, the substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method includes exposing the substrate to a cobalt precursor gas and to a ruthenium precursor gas to form a cobalt-ruthenium liner layer on the first surface of the substrate and on the sidewall and bottom surface of the opening.
1. A method of forming a cobalt-ruthenium layer on a substrate disposed in a process chamber, comprising:
simultaneously exposing a substrate, having an opening formed in a first surface of the substrate to a cobalt precursor and to a ruthenium precursor to form a cobalt-ruthenium layer on the first surface of the substrate and on a sidewall and a bottom surface of the opening, wherein a ratio of the cobalt precursor to the ruthenium precursor is about 2:1 to about 4:1;
depositing a conductive layer atop the cobalt-ruthenium layer; and
annealing the substrate to fill the opening by drawing the conductive layer toward the bottom surface of the opening.
2. The method of claim 1 , wherein the opening has a height to width aspect ratio of at least about 4:1.
3. The method of claim 1 , wherein the cobalt-ruthenium layer has a thickness of less than about 20 angstroms.
4. The method of claim 1 , wherein a flow rate of the cobalt precursor is about 750 sccm to about 1000 sccm.
5. The method of claim 1 , wherein a flow rate of the ruthenium precursor is about 500 sccm to about 1050 sccm.
6. The method of claim 1 , further comprising exposing the substrate to a hydrogen (H 2 ) gas along with the cobalt precursor and the ruthenium precursor.
7. The method of claim 1 , further comprising heating the substrate prior to depositing the cobalt-ruthenium layer.
8. The method of claim 1 , further comprising maintaining a pressure in the process chamber of about 15 Torr to about 20 Torr during deposition of the cobalt-ruthenium layer.
9. The method of claim 1 , wherein the cobalt precursor is one or more of cobalt carbonyl complexes, cobalt amidinate compounds, cobaltocene compounds, cobalt dienyl complexes, cobalt nitrosyl complexes, dicobalt hexacarbonyl acetyl compounds, cyclopentadienyl cobalt bis(carbonyl) (CpCo(CO) 2 ), tricarbonyl allyl cobalt ((CO) 3 Co(CH 2 CH═CH 2 )), or derivatives thereof, complexes thereof, or combinations thereof.
10. The method of claim 1 , wherein the ruthenium precursor is one or more of methyl-cyclohexadine ruthenium tricarbonylcyclohexadine, ruthenium tricarbonyl, butadiene ruthenium tricarbonyl, dimethyl butadiene ruthenium tricarbonyl, or modified dines with Ru(CO) 3 .
11. The method of claim 1 , further comprising:
providing the cobalt precursor to the process chamber at a pressure of about 5 Torr to about 20 Torr to form a cobalt seed layer on the first surface of the substrate and on the sidewall and bottom surface of the opening prior to forming the cobalt-ruthenium layer.