Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.
1. A method, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein;
flowing a boron-containing gas mixture into the processing volume;
stabilizing a pressure in the processing volume for a predefined RF-on delay time period;
generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate;
exposing the processing volume to a dry cleaning process; and
depositing an amorphous boron season layer over at least one surface in the processing volume.
2. The method of claim 1 , wherein the predefined RF-on delay time period is a fixed time delay defined as the time period between flowing the boron-containing gas mixture into the processing volume and generating the RF plasma.
3. The method of claim 2 , wherein a length of the predefined RF-on delay time period is selected so that the boron-containing gas mixture does not begin to thermally decompose or substantially thermally decompose in the processing volume.
4. The method of claim 1 , wherein flowing the hydrocarbon-containing gas mixture into the processing volume having the substrate positioned therein, flowing the boron-containing gas mixture into the processing volume, and stabilizing the pressure in the processing volume for the predefined RF-on delay time period at least partially overlap.
5. The method of claim 1 , wherein the predefined RF-on delay time period is between about 0.1 seconds and 5 seconds.
6. The method of claim 1 , wherein stabilizing the pressure in the processing volume for the predefined RF-on delay time period further comprises:
measuring a pressure variation in the processing volume caused by the flowing the boron-containing gas mixture into the processing volume;
comparing the pressure variation to a predetermined pressure band; and
generating the RF plasma in the processing volume after the predefined RF-on delay time period expires if the pressure variation is less than or falls within the predetermined pressure band.
7. The method of claim 6 , wherein the predetermined pressure band is from about 0.05 Torr to about 0.5 Torr.
8. The method of claim 1 , wherein the dry cleaning process comprises:
delivering a fluorine-containing gas, an oxidizing gas, or mixture thereof into the processing volume;
forming a plasma via a remote plasma source; and
delivering the plasma to the processing volume.
9. The method of claim 1 , wherein depositing the amorphous boron season layer comprises:
flowing a second boron-containing gas mixture into the processing volume; and
thermally decomposing the second boron-containing gas mixture to deposit the amorphous boron season layer over the at least one surface in the processing volume.
10. The method of claim 9 , wherein the amorphous boron season layer has a thickness between about 300 Å and about 1,500 Å.
11. A method, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein;
flowing a boron-containing gas mixture into the processing volume;
stabilizing a pressure in the processing volume for a predefined RF-on delay time period; and
generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate.
12. The method of claim 11 , wherein the predefined RF-on delay time period is a fixed time delay defined as the time period between flowing the boron-containing gas mixture into the processing volume and generating the RF plasma.
13. The method of claim 12 , wherein a length of the predefined RF-on delay time period is selected so that the boron-containing gas mixture does not begin to thermally decompose or substantially thermally decompose in the processing volume.
14. The method of claim 11 , wherein flowing the hydrocarbon-containing gas mixture into the processing volume having the substrate positioned therein, flowing the boron-containing gas mixture into the processing volume, and stabilizing the pressure in the processing volume for the predefined RF-on delay time period at least partially overlap.
15. The method of claim 11 , wherein the predefined RF-on delay time period is between about 0.1 seconds and about 5 seconds.
16. The method of claim 11 , wherein stabilizing the pressure in the processing volume for the predefined RF-on delay time period further comprises:
measuring a pressure variation in the processing volume caused by the flowing the boron-containing gas mixture into the processing volume;
comparing the pressure variation to a predetermined pressure band; and
generating the RF plasma in the processing volume after the predefined RF-on delay time period expires if the pressure variation is less than or falls within the predetermined pressure band.
17. The method of claim 16 , wherein the predetermined pressure band is from about 0.05 Torr to about 0.5 Torr.
18. A method, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, wherein the hydrocarbon-containing gas mixture comprises propene (C 3 H 6 );
flowing a boron-containing gas mixture into the processing volume, wherein the boron-containing gas mixture comprises diborane (B 2 H 6 ) and at least one of nitrogen (N 2 ), helium, argon, and hydrogen (H 2 );
stabilizing a pressure in the processing volume for a predefined RF-on delay time period, comprising:
measuring a pressure variation in the processing volume caused by the flowing the boron-containing gas mixture into the processing volume; and
comparing the pressure variation to a predetermined pressure band; and
generating an RF plasma in the processing volume after the predefined RF-on delay time period expires if the pressure variation is less than or falls within the predetermined pressure band to deposit a boron-containing amorphous film on the substrate, wherein the predefined RF-on delay time period is a fixed time delay defined as the time period between flowing the boron-containing gas mixture into the processing volume and generating the RF plasma.
19. The method of claim 18 , wherein the predefined RF-on delay time period is between about 0.1 seconds and about 5 seconds.
20. The method of claim 19 , wherein the predetermined pressure band is from about 0.05 Torr to about 0.5 Torr.