Solid-state imaging device and camera including discrete trench isolation structure
A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
1. An imaging device, comprising:
a plurality of photoelectric conversion elements including a first photoelectric conversion element and a second photoelectric conversion element;
a floating diffusion portion;
a first transfer transistor configured to transfer charges generated in the first photoelectric conversion element to the floating diffusion portion;
an impurity diffusion isolation region, a first portion of the impurity diffusion isolation region being formed between the first photoelectric conversion element and the second photoelectric conversion element;
a first discrete trench isolation structure; and
a second discrete trench isolation structure on an opposite side of the floating diffusion portion as the first discrete trench isolation structure, wherein
the floating diffusion portion contacts a portion of the first discrete trench isolation structure,
a gate electrode of the first transfer transistor covers a portion of the first discrete trench isolation structure, and
the first discrete trench isolation structure is surrounded by a second portion of the impurity diffusion isolation region.
2. The imaging device according to claim 1 , further comprising a second transfer transistor configured to transfer charges generated in the second photoelectric conversion element to the floating diffusion portion.
3. The image device according to claim 1 , further comprising a reset transistor disposed between the floating diffusion portion and a predetermined voltage.
4. The imaging device according to claim 3 , wherein the first discrete trench isolation structure is in contact with the reset transistor.
5. The imaging device according to claim 3 , further comprising a selection transistor, wherein a gate electrode of the selection transistor is connected to the floating diffusion portion.
6. The imaging device according to claim 1 , wherein the first discrete trench isolation structure is formed by a shallow trench structure.
7. The image device according to claim 1 , wherein the gate electrode of the first transfer transistor includes polysilicon.
8. The imaging device according to claim 1 , wherein the impurity diffusion isolation region is a different shape structure from the first discrete trench isolation structure.
9. The imaging device according to claim 1 , further comprising a planarized insulating film formed on the first discrete trench isolation structure and the impurity diffusion isolation region.
10. The imaging device according to claim 9 , wherein a film thickness of the planarized insulating film is greater than or equal to a film thickness of a gate-insulated film.
11. The imaging device according to claim 1 , wherein the first photoelectric conversion element is not directly in contact with the floating diffusion portion.
12. A camera device, comprising:
an optical system;
an imaging device including:
a plurality of photoelectric conversion elements having a first photoelectric conversion element and a second photoelectric conversion element,
a floating diffusion portion,
a first transfer transistor configured to transfer charges generated in the first photoelectric conversion element to the floating diffusion portion,
a first portion of an impurity diffusion isolation region formed between the first photoelectric conversion element and the second photoelectric conversion element, and
a first discrete trench isolation structure;
a signal processing circuit; and
a second discrete trench isolation structure on an opposite side of the floating diffusion portion as the first discrete trench isolation structure, wherein
the floating diffusion portion contacts a portion of the first discrete trench isolation structure,
a gate electrode of the first transfer transistor covers a portion of the first discrete trench isolation structure, and
the first discrete trench isolation structure is surrounded by a second portion of the impurity diffusion isolation region.
13. The camera device according to claim 12 , further comprising a second transfer transistor configured to transfer charges generated in the second photoelectric conversion element to the floating diffusion portion.
14. The camera device according to claim 12 , further comprising a reset transistor disposed between the floating diffusion portion and a predetermined voltage.
15. The camera device according to claim 14 , wherein the first discrete trench isolation structure is in contact with the reset transistor.
16. The camera device according to claim 14 , further comprising a selection transistor, wherein a gate electrode of the selection transistor is connected to the floating diffusion portion.
17. The camera device according to claim 12 , wherein the first discrete trench isolation structure is formed by a shallow trench structure.
18. The camera device according to claim 12 , wherein the gate electrode of the first transfer transistor includes polysilicon.
19. The camera device according to claim 12 , wherein the impurity diffusion isolation region is a different shape structure from the first discrete trench isolation structure.
20. The camera device according to claim 12 , further comprising a planarized insulating film formed on the first discrete trench isolation structure and the impurity diffusion isolation region.
21. The camera device according to claim 11 , wherein a film thickness of the planarized insulating film is greater than or equal to a film thickness of a gate-insulated film.
22. The camera device according to claim 12 , wherein the first photoelectric conversion element is not directly in contact with the floating diffusion portion.