Solid-state imaging device, method of manufacturing the same, and electronic equipment
A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
1. An imaging device, comprising:
a semiconductor layer having a first side that receives light from a light-incident side of the imaging device, and a second side opposite to the first side, the semiconductor layer including a photoelectric conversion element;
a first film adjacent to the first side of the semiconductor layer;
an insulating film at a side of the first film closest to the light-incident side;
a light-shielding portion at a side of the insulating film closest to the light-incident side; and
a second film on the first film and the light-shielding portion;
wherein,
the insulating film and the light-shielding portion are surrounded by the first film and the second film in a cross-section view, and
a surface of the second film on the light-incident side has a convex shape when viewed from the light-incident side that corresponds with the light-shielding portion and the insulating film in the cross-section view.
2. The imaging device of claim 1 , wherein the second film covers at least a top surface, a first side surface, and a second side surface of the light-shielding portion in the cross-section view, and wherein the second film covers at least a first side surface and a second side surface of the insulating film in the cross-section view.
3. The imaging device of claim 2 , wherein the first film is in direct contact with the second film and the insulating film.
4. The imaging device of claim 1 , wherein the first film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium and lanthanoid.
5. The imaging device of claim 1 , wherein the second film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid and silicon.
6. The imaging device of claim 1 , wherein the insulating film is a silicon oxide film.
7. The imaging device of claim 1 , wherein the first film has a refraction index of 1.5 or more.
8. The imaging device of claim 1 , wherein the second film has a refraction index of 1.5 or more.
9. The imaging device of claim 1 , wherein the light-shielding portion includes tungsten and titanium nitride.
10. The imaging device of claim 1 , wherein a thickness of the light-shielding portion is from 100 nm to 400 nm.
11. The imaging device of claim 1 , wherein a thickness of the first film is from 1 nm to 20 nm.
12. The imaging device of claim 1 , wherein a thickness of the first film together with the second film is from 40 nm to 80 nm.
13. The imaging device of claim 1 , wherein a thickness of the first film is constant and the thickness extends along the first side of the semiconductor layer.
14. The imaging device of claim 1 , wherein a thickness of the first film is thinner than a thickness of the second film.
15. An imaging device, comprising:
a semiconductor layer having a first side that receives light from a light-incident side of the imaging device, and a second side opposite to the first side, the semiconductor layer including a photoelectric conversion element;
a first film adjacent to the first side of the semiconductor layer;
an insulating film at a side of the first film closest to the light-incident side;
a light-shielding portion at a side of the insulating film closest to the light-incident side; and
a second film on the first film and the light-shielding portion,
wherein,
the second film covers at least a top surface, a first side surface, and a second side surface of the light-shielding portion in a cross-section view,
the second film covers at least a first side surface and a second side surface of the insulating film in the cross-section view, and
a surface of the second film on the light-incident side has a convex shape when viewed from the light-incident side that corresponds with the light-shielding portion and the insulating film in the cross-section view.
16. The imaging device of claim 15 , wherein the first film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium and lanthanoid.
17. The imaging device of claim 15 , wherein the second film includes at least one of an oxide of hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, lanthanoid and silicon.
18. The imaging device of claim 15 , wherein the insulating film is a silicon oxide film.
19. The imaging device of claim 15 , wherein the first film has a refraction index of 1.5 or more.
20. The imaging device of claim 15 , wherein the second film has a refraction index of 1.5 or more.
21. The imaging device of claim 15 , wherein the light-shielding portion includes tungsten and titanium nitride.
22. The imaging device of claim 15 , wherein a thickness of the light-shielding portion is from 100 nm to 400 nm.
23. The imaging device of claim 15 , wherein a thickness of the first film is from 1 nm to 20 nm.
24. The imaging device of claim 15 , wherein a thickness of the first film together with the second film is from 40 nm to 80 nm.
25. The imaging device of claim 15 , wherein a thickness of the first film is constant and the thickness extends along the first side of the semiconductor layer.
26. The imaging device of claim 15 , wherein the second film is a single film.
27. The imaging device of claim 15 , wherein a thickness of the first film is thinner than a thickness of the second film.
28. An electric apparatus comprising:
an optical system;
a signal processing circuit;
an imaging device, comprising:
a semiconductor layer having a first side that receives light from a light-incident side of the imaging device, and a second side opposite to the first side, the semiconductor layer including a photoelectric conversion element;
a first film adjacent to the first side of the semiconductor layer;
an insulating film at a side of the first film closest to the light-incident side;
a light-shielding portion at a side of the insulating film closest to the light-incident side; and
a second film on the first film and the light-shielding portion;
wherein,
the insulating film and the light-shielding portion are surrounded by the first film and the second film in a cross-section view,
a surface of the second film on the light-incident side has a convex shape when viewed from the light-incident side that corresponds with the light-shielding portion and the insulating film in the cross-section view,
the optical system focuses an incident light onto the imaging device, and
the processing circuit receives and processes an output of the imaging device.
29. An electric apparatus comprising:
an optical system;
a signal processing circuit;
an imaging device, comprising:
a semiconductor layer having a first side that receives light from a light-incident side of the imaging device, and a second side opposite to the first side, the semiconductor layer including a photoelectric conversion element;
a first film adjacent to the first side of the semiconductor layer;
an insulating film at a side of the first film closest to the light-incident side;
a light-shielding portion at a side of the insulating film closest to the light-incident side; and
a second film on the first film and the light-shielding portion,
wherein,
the second film covers at least a top surface, a first side surface, and a second side surface of the light-shielding portion in a cross-section view,
the second film covers at least a first side surface and a second side surface of the insulating film in the cross-section view,
a surface of the second film on the light-incident side has a convex shape when viewed from the light-incident side that corresponds with the light-shielding portion and the insulating film in the cross-section view,
the optical system focuses an incident light onto the imaging device, and
the processing circuit receives and processes an output of the imaging device.