Method for processing base body to be processed
An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.
1. A method for processing a base body to be processed, the method comprising:
providing a plasma processing apparatus including a first conduit which extends along an axial line of a processing chamber and supplies a processing gas into a processing space of the processing chamber along the axial line, and a second conduit which annularly extends around the axial line and supplies the processing gas from a circumference of the axial line to the processing space of the processing chamber;
preparing a base body to be processed having a first layer containing nickel silicide and a second layer containing silicon nitride in the processing chamber;
supplying a first processing gas, which contains hydrofluorocarbon gas and argon gas but does not contain oxygen gas, into the processing space of the processing chamber through the first and second conduits and generating plasma of the first processing gas in the processing chamber thereby etching the second layer; and
after etching the second layer, supplying a second processing gas into the processing space of the processing chamber through the first and second conduits and generating plasma of the second processing gas in the processing chamber thereby removing a residue from the base body to be processed,
wherein the second processing gas contains nitrogen gas and hydrogen gas but does not contain oxygen gas,
wherein in the etching of the second layer, a ratio of a flow rate of the first processing gas ejected from the first conduit over a flow rate of the first processing gas ejected from the second conduit is 95:5, and
wherein in the removing of a residue from the base body to be processed, a ratio of a flow rate of the second processing gas ejected from the first conduit over a flow rate of the second processing gas ejected from the second conduit is 100:0.
2. The method of claim 1 , wherein after the etching, the removing of the residue is performed without withdrawing the base body to be processed from the processing chamber.
3. The method of claim 1 , wherein the second processing gas includes H 2 gas and N 2 gas.
4. The method of claim 1 , wherein a ratio of the hydrofluorocarbon gas to the argon gas is 1% or less.
5. The method of claim 1 , wherein when the hydrofluorocarbon gas is CHxFy, x≧y and y≧1.
6. The method of claim 1 , wherein in the etching, a flow rate of the argon gas is 1000 sccm.
7. The method of claim 1 , wherein in the etching, a pressure of the processing space is 100 mTorr.
8. A method for processing a base body to be processed, the method comprising:
providing a plasma processing apparatus including a first conduit which extends along an axial line of a processing chamber and supplies a processing gas into a processing space of the processing chamber along the axial line, and a second conduit which annularly extends around the axial line and supplies the processing gas from a circumference of the axial line to the processing space of the processing chamber;
preparing a base body to be processed, which includes a first layer containing nickel silicide and a second layer containing silicon nitride in the processing chamber;
oxidizing a surface of the first layer in the processing chamber;
supplying a first processing gas containing hydrofluorocarbon gas and argon gas into the processing space of the processing chamber through the first and second conduits and generating plasma of the first processing gas in the processing chamber thereby etching the second layer; and
after etching the second layer, supplying a second processing gas into the processing space of the processing chamber through the first and second conduits and generating plasma of the second processing gas in the processing chamber thereby removing a residue from the base body to be processed,
wherein the second processing gas contains nitrogen gas and hydrogen gas but does not contain oxygen gas,
wherein, in the etching of the second layer, a ratio of a flow rate of the first processing gas ejected from the first conduit over a flow rate of the first processing gas ejected from the second conduit is 95:5, and
wherein, in the removing of a residue from the base body to be processed, a ratio of a flow rate of the second processing gas ejected from the first conduit over a flow rate of the second processing gas ejected from the second conduit is 100:0.