Power storage element, manufacturing method thereof, and power storage device
Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
1. A semiconductor device comprising:
a transistor comprising:
a gate electrode and a semiconductor film with a gate insulating film therebetween; and
source and drain electrodes electrically connected to the semiconductor film;
a power storage element comprising:
a pair of electrodes;
a first layer over and in contact with the pair of electrodes; and
a second layer over the first layer; and
a wiring,
wherein:
the first layer comprises a solid electrolyte,
the second layer comprises a carrier supplying material, and
one of the source and drain electrodes is electrically connected to one of the pair of electrodes through the wiring.
2. The semiconductor device according to claim 1 , further comprising:
an interlayer insulating film covering the transistor,
wherein the pair of electrodes is on the interlayer insulating film.
3. The semiconductor device according to claim 1 , wherein the power storage element is positioned over the transistor.
4. The semiconductor device according to claim 1 , wherein the semiconductor film includes a metal oxide containing In.
5. The semiconductor device according to claim 1 , wherein:
one of the pair of electrodes comprises a first metal and an oxide thereof, and
the other of the pair of electrodes comprises a second metal and an oxide thereof.
6. The semiconductor device according to claim 5 , wherein:
the first metal is V or Mn, and
the second metal is one of Nb, Cu, Co, Ni, Fe, W, Mo and Ta.
7. The semiconductor device according to claim 5 , wherein:
the oxide of the first metal covers upper and side surfaces of the first metal, and
the oxide of the second metal covers upper and side surfaces of the second metal.
8. The semiconductor device according to claim 1 , wherein the solid electrolyte is one of a sulfide-based solid electrolyte containing Li, an oxide-based solid electrolyte containing Li, and a polymer solid electrolyte.
9. The semiconductor device according to claim 1 , wherein the carrier supplying material is one of Li, Na, K, Ca, Sr, Ba, Be and Mg.
10. The semiconductor device according to claim 1 , wherein:
the wiring comprises a first wiring layer and a second wiring layer over a surface of the first wiring layer, and
the first wiring layer contains a metal element, and
the second wiring layer contains an oxide of the metal element.
11. The semiconductor device according to claim 10 , wherein the metal element is Al.
12. An electrical device comprising the semiconductor device according to claim 1 .
13. A semiconductor device comprising:
a transistor comprising:
a gate electrode and a semiconductor film with a gate insulating film therebetween; and
source and drain electrodes electrically connected to the semiconductor film;
a first power storage element and a second power storage element each comprising:
a pair of electrodes;
a first layer over and in contact with the pair of electrodes; and
a second layer over the first layer; and
a first wiring and a second wiring,
wherein:
the first layer comprises a solid electrolyte,
the second layer comprises a carrier supplying material,
one of the source and drain electrodes is electrically connected to one of the pair of electrodes of the first power storage element and one of the pair of electrodes of the second power storage element through the first wiring, and
the other of the pair of electrodes of the first power storage element and the other of the pair of electrodes of the second power storage element are electrically connected to each other through the second wiring.
14. The semiconductor device according to claim 13 , further comprising:
an interlayer insulating film covering the transistor,
wherein in each of the first power storage element and the second power storage element, the pair of electrodes is on the interlayer insulating film.
15. The semiconductor device according to claim 13 , wherein the first power storage element and the second power storage element are positioned over the transistor.
16. The semiconductor device according to claim 13 , wherein the semiconductor film includes a metal oxide containing In.
17. The semiconductor device according to claim 13 , wherein in each of the first power storage element and the second power storage element:
one of the pair of electrodes comprises a first metal and an oxide thereof, and
the other of the pair of electrodes comprises a second metal and an oxide thereof.
18. The semiconductor device according to claim 17 , wherein:
the first metal is V or Mn, and
the second metal is one of Nb, Cu, Co, Ni, Fe, W, Mo and Ta.
19. The semiconductor device according to claim 17 , wherein:
the oxide of the first metal covers upper and side surfaces of the first metal, and
the oxide of the second metal covers upper and side surfaces of the second metal.
20. The semiconductor device according to claim 13 , wherein in each of the first power storage element and the second power storage element, the solid electrolyte is one of a sulfide-based solid electrolyte containing Li, an oxide-based solid electrolyte containing Li, and a polymer solid electrolyte.
21. The semiconductor device according to claim 13 , wherein in each of the first power storage element and the second power storage element, the carrier supplying material is one of Li, Na, K, Ca, Sr, Ba, Be and Mg.
22. The semiconductor device according to claim 13 , wherein:
the first wiring and the second wiring each comprise a first wiring layer and a second wiring layer over a surface of the first wiring layer, and
the first wiring layer contains a metal element, and
the second wiring layer contains an oxide of the metal element.
23. The semiconductor device according to claim 22 , wherein the metal element is Al.
24. An electrical device comprising the semiconductor device according to claim 13 .