Method of controlling gas supply apparatus and substrate processing system

1. A method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method comprising:

supplying a liquid or solid raw material to a raw material container included in a vaporizer;

vaporizing the liquid or solid raw material in the raw material container to produce a raw material gas;

without flowing a carrier gas, exhausting directly to vacuum an interior of the raw material container of the raw material gas, which remained from a film formation of a current substrate, while the liquid or solid raw material, which is present in an amount sufficient to perform at least one process cycle, is continuously vaporized within the raw material container, at a pressure before a fogging phenomenon occurs;

supplying the carrier gas from the carrier gas supply source to the raw material container after the interior of the raw material container is exhausted to vacuum; and

flowing the raw material gas and the carrier gas from the raw material container to a processing chamber, in which a subsequent substrate to be processed is accommodated via the gas supply line, for a film formation of the subsequent substrate, wherein an internal pressure of the raw material container includes a fogging pressure at which the raw material gas produced by vaporizing the raw material is fogged, and

wherein exhausting to vacuum the interior of the raw material container is performed such that in a process initiation of the subsequent substrate to be processed, when the carrier gas has been supplied into the raw material container, the internal pressure of the raw material container is below the fogging pressure.

2. The method of claim 1 , wherein the vaporizer includes a heating device configured to heat the raw material received in the raw material container, and

wherein the heating device continues to heat the raw material received in the raw material container during a period of time between a process termination of a current substrate to be processed and a process initiation of the subsequent substrate to be processed.

3. A method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method comprising:

supplying a liquid or solid raw material to a raw material container included in a vaporizer;

vaporizing the liquid or solid raw material in the raw material container to produce a raw material gas;

supplying a carrier gas from the carrier gas supply source to the raw material container;

repeatedly supplying the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed to form a thin film is accommodated via the gas supply line; and

without flowing the carrier gas, exhausting directly to vacuum an interior of the raw material container of the raw material gas, which remained from a film formation of a current substrate, while the liquid or solid raw material, which is present in an amount sufficient to perform at least one process cycle, is continuously vaporized within the raw material container, at a pressure before a fogging phenomenon occurs, for each supply of the raw material gas to the processing chamber,

wherein an internal pressure of the raw material container includes a fogging pressure at which the raw material gas produced by vaporizing the raw material is fogged, and

wherein exhausting to vacuum the interior of the raw material container is performed such that in a process initiation of the subsequent substrate to be processed, when the carrier gas has been supplied into the raw material container, the internal pressure of the raw material container is below the fogging pressure.

4. The method of claim 3 , wherein exhausting to vacuum the interior of the raw material container is performed such that a gas volume of the raw material gas supplied from the raw material container is maintained within an allowable range for each supply of the raw material gas.

5. The method of claim 4 , wherein the gas volume of the raw material gas includes a recovery lower limit, which is a limit of the gas volume of the raw material gas in the processing chamber, at which the gas volume of the raw material gas is maintained to provide a predetermined thickness of the thin film during a time interval between current and subsequent flows of the raw material gas from the interior of the raw material container to the gas supply line together with the carrier gas, and

where exhausting the interior of the raw material container is performed such that the gas volume is below the recovery lower limit.

6. The method of claim 4 , wherein the gas volume of the raw material gas includes a recovery lower limit,

wherein when the recovery lower limit varies depending on a residual amount of the raw material received in the raw material container, the recovery lower limit corresponds to a value for a use limit level of the gas volume where the residual amount of the raw material in the processing chamber is close to zero, and

wherein exhausting the interior of the raw material container is performed such that the gas volume is below the recovery limit.

7. The method of claim 3 , wherein repeatedly supplying the raw material gas is performed 10 times or less.

8. A method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method comprising:

supplying a liquid or solid raw material to a raw material container included in a vaporizer;

vaporizing the liquid or solid raw material in the raw material container to produce a raw material gas;

supplying a carrier gas from the carrier gas supply source to the raw material container;

without flowing the carrier gas, exhausting directly to vacuum an interior of the raw material container of the raw material gas, which remained from a film formation of a current substrate, while the liquid or solid raw material, which is present in an amount sufficient to perform at least one process cycle, is continuously vaporized within the raw material container, to prevent a fogging phenomenon, during a period of time between a process termination of the current substrate to be processed and a process initiation of a subsequent substrate to be processed;

repeatedly supplying the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed to form a thin film is accommodated via the gas supply line; and

without flowing the carrier gas, exhausting directly to vacuum the interior of the raw material container for each supply of the raw material gas at a pressure before a fogging phenomenon occurs,

wherein an internal pressure of the raw material container includes a fogging pressure at which the raw material gas produced by vaporizing the raw material is fogged, and

wherein exhausting to vacuum the interior of the raw material container is performed such that in a process initiation of the subsequent substrate to be processed, when the carrier gas has been supplied into the raw material container, the internal pressure of the raw material container is below the fogging pressure.