Titanium silicide formation in a narrow source-drain contact
Aspects of the present invention relate to approaches for forming a narrow source-drain contact in a semiconductor device. A contact trench can be etched to a source-drain region of the semiconductor device. A titanium liner can be deposited in this contact trench such that it covers substantially an entirety of the bottom and walls of the contact trench. An x-metal layer can be deposited over the titanium liner on the bottom of the contact trench. A titanium nitride liner can then be formed on the walls of the contact trench. The x-metal layer prevents the nitriding of the titanium liner on the bottom of the contact trench during the formation of the nitride liner.
1. A method for forming a narrow source-drain contact in a semiconductor device, comprising:
etching a contact trench to a source-drain region of the semiconductor device;
depositing a titanium liner in the contact trench, the titanium liner covering substantially an entirety of a bottom and walls of the contact trench;
depositing an x-metal layer over the titanium liner on the bottom of the contact trench; and
forming a titanium nitride liner on substantially an entirety of the walls of the contact trench,
wherein the x-metal layer prevents a nitriding of the titanium liner on the bottom of the contact trench during formation of the titanium nitride liner.
2. The method of claim 1 , wherein the contact trench is less than 30 nm in width.
3. The method of claim 1 , wherein the x-metal layer comprises at least one of:
platinum, hafnium, cobalt, nickel, or tungsten.
4. The method of claim 1 , further comprising:
depositing the x-metal layer over the titanium liner on substantially an entirety of the walls of the contact trench; and
depositing the titanium nitride liner over the x-metal layer on substantially an entirety of the walls of the contact trench,
wherein the depositing of each of the titanium liner, the x-metal layer, and the titanium nitride liner is performed via an atomic layer deposition (ALD) process.
5. The method of claim 1 , wherein the forming of the titanium nitride liner further comprises nitriding the titanium liner on the walls of the contact trench.
6. The method of claim 5 , wherein the forming of the titanium nitride liner further comprises:
annealing the titanium liner with at least one of nitrogen or NH 3 to nitride the titanium liner, and
depositing titanium nitride over the x-metal layer on the bottom of the contact trench via a physical vapor deposition (PVD) process.
7. The method of claim 5 , wherein the forming of the titanium nitride liner further comprises:
depositing titanium nitride over the x-metal layer on the bottom of the contact trench via a reactive sputtering physical vapor deposition (PVD) process in an N 2 ambient environment,
wherein the sputtering PVD process causes the nitriding of the titanium liner.
8. The method of claim 1 , further comprising:
forming a contact to the source-drain region in the contact trench,
wherein the contact is a tungsten contact, and
wherein the titanium nitride liner binds the tungsten contact to the walls of the contact trench.
9. A method for forming a semiconductor device, comprising:
forming a source-drain region, a replacement metal gate, and an inter-layer dielectric layer on a substrate;
etching a contact trench that is less than 30 nm in width through the inter-layer dielectric layer to the source-drain region;
depositing a titanium liner in the contact trench, the titanium liner covering substantially an entirety of a bottom and walls of the contact trench;
depositing an x-metal layer over the titanium liner on the bottom of the contact trench;
forming a titanium nitride liner on substantially an entirety of the walls of the contact trench, and
forming a contact to the source-drain region in the contact trench,
wherein the x-metal layer prevents a nitriding of the titanium liner on the bottom of the contact trench during formation of the titanium nitride liner, and
wherein the titanium nitride liner binds the contact to the walls of the contact trench.
10. The method of claim 9 , wherein the x-metal layer comprises at least one of:
platinum, hafnium, cobalt, nickel, or tungsten.
11. The method of claim 9 , comprising:
depositing the x-metal layer over the titanium liner on substantially an entirety of the walls of the contact trench; and
depositing the titanium nitride liner over the x-metal layer on substantially an entirety of the walls of the contact trench,
wherein the depositing of each of the titanium liner, the x-metal layer, and the titanium nitride liner is performed via an atomic layer deposition (ALD) process.
12. The method of claim 9 , wherein the forming of the titanium nitride liner further comprises nitriding the titanium liner on the walls of the contact trench.
13. The method of claim 12 , wherein the forming of the titanium nitride liner further comprises:
annealing the titanium liner with at least one of nitrogen or NH 3 to nitride the titanium liner, and
depositing titanium nitride over the x-metal layer on the bottom of the contact trench via a physical vapor deposition (PVD) process.
14. The method of claim 12 , wherein the forming of the titanium nitride liner further comprises:
depositing titanium nitride over the x-metal layer on the bottom of the contact trench via a reactive sputtering physical vapor deposition (PVD) process in an N 2 ambient environment,
wherein the sputtering PVD process causes the nitriding of the titanium liner.
15. The method of claim 9 , wherein the contact is a tungsten contact.
16. The method of claim 9 , wherein the metal gate is a replacement metal gate in a replacement metal gate transistor.