Apparatus and method

1. A method for processing a surface of a substrate by exposing the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to principles of atomic layer deposition method, wherein the method includes:

arranging a deposition chamber having a space and positioning a source inside the space of the deposition chamber,

feeding on the surface of the substrate locally inside the deposition chamber a first starting material by means of a source by moving the source inside the deposition chamber on the surface of the substrate, and

exposing the surface of the substrate processed with the first starting material to a second starting material by feeding the second starting material independently of the movement of the source to be introduced to the space of the deposition chamber such that the second starting material surrounds the source inside the deposition chamber.

2. The method according to claim 1 , wherein the source is moved substantially in a direction of the surface of the substrate or in a proximity of the surface of the substrate.

3. The method according to claim 1 , wherein the source is moved substantially in the direction of the surface of the substrate with a reciprocating movement on the surface of the substrate or in the proximity thereof in relation to the substrate.

4. The method according to claim 1 , wherein the substrate is moved in relation to the source.

5. The method according to claim 1 , wherein the source is rotated in relation to the surface of the substrate.

6. The method according to claim 5 , wherein the source comprises a rotatable starting material feeding member, which is rotated about a first rotation axis, and from which source the first starting material is fed substantially in the direction of the first rotation axis.

7. The method according to claim 5 , wherein the source comprises a rotatable starting material feeding member, which is rotated about a second rotation axis, and from which source the first starting material is fed substantially transversally, radially or perpendicularly in relation to the second rotation axis.

8. The method according to claim 1 , wherein flushing agent is fed on the surface of the substrate by means of the source in order to flush the surface of the substrate.

9. The method according to claim 1 , wherein first starting material or flushing agent is removed from the surface of the substrate by means of suction provided by the source, or vacuum is provided between the source and the surface of the substrate by means of the suction of the source.

10. The method according to claim 1 , wherein the surface of the substrate is exposed alternately to the first starting material fed by the source and to the second starting material present in the atmosphere.

11. The method according to claim 1 , wherein a first starting material is fed on the surface of the substrate successively with two or more sources by exposing the surface of the substrate between the sources to a second starting material present in the atmosphere.

12. The method according to claim 1 , wherein the first or the second starting material is one of plasma, radical, or a material that is configured to provide a sparkle.

13. The method according to claim 1 , wherein the second starting material is reactive or non reactive.

14. The method according to claim 1 , wherein the second starting material is air, water vapor or oxygen.