Wafer processing method and electronic device
Disclosed herein is a wafer processing method for processing the back side of a wafer having a plurality of devices formed on the front side so as to be separated by a plurality of crossing division lines. The wafer processing method includes a back grinding step of grinding the back side of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a back polishing step of polishing the back side of the wafer after performing the back grinding step, thereby removing grinding strain, and a diamond-like carbon film deposition step of forming a diamond-like carbon film on the back side of the wafer after performing the back polishing step.
1. A wafer processing method for processing the back side of a wafer having a plurality of spaced devices formed on the front side so as to be separated by a plurality of crossing division lines, said wafer processing method comprising:
a back grinding step of grinding the back side of said wafer to thereby reduce the thickness of said wafer to a predetermined thickness;
a back polishing step of polishing the back side of said wafer after performing said back grinding step, thereby removing grinding strain; and
a diamond-like carbon film deposition step of forming a diamond-like carbon film on the back side of said wafer and side surfaces of the plurality of spaced devices after performing said back polishing step.
2. The wafer processing method according to claim 1 , wherein said diamond-like carbon film has a thickness of 10 to 100 nm.