Etching method
Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.
1. An etching method comprising:
providing a workpiece to be processed into a processing container of a plasma processing apparatus, the workpiece including a first region having a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film, and a second region having a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region;
providing a mask on the workpiece to provide an opening on each of the first region and the second region so that the first region and the second region of the workpiece are simultaneously etched;
generating plasma of a first processing gas that contains fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas, within the processing container of the plasma processing apparatus;
generating plasma of a second processing gas that contains fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas within the processing container of the plasma processing apparatus, the halogen-containing gas being a gas that forms a reaction product of a halogen element and silicon to form a deposit on a surface of the workpiece; and
generating plasma of a third gas containing oxygen gas within the processing container of the plasma processing apparatus,
wherein a sequence, which includes the generating the plasma of the first processing gas, the generating the plasma of the second processing gas, and the generating the plasma of the third processing gas, is executed plural times.
2. The etching method of claim 1 , wherein a flow rate of the oxygen gas of the first processing gas and a flow rate of the oxygen gas of the second processing gas are increased in a stepwise manner as the number of times of execution of the sequence is increased.
3. The etching method of claim 2 , wherein a temperature of the workpiece is increased in a stepwise manner as the number of times of execution of the sequence is increased.
4. The etching method of claim 2 , wherein the second processing gas contains the first processing gas and the halogen-containing gas.
5. The etching method of claim 2 , wherein an execution time of the generating the plasma of the first processing gas is longer than that of the generating the plasma of the second processing gas.
6. The etching method of claim 2 , wherein a pressure inside the processing container and a power for generating plasma are maintained constant during each of the times of execution of the sequence.
7. The etching method of claim 1 , wherein a temperature of the workpiece is increased in a stepwise manner as the number of times of execution of the sequence is increased.
8. The etching method of claim 7 , wherein the second processing gas contains the first processing gas and the halogen-containing gas.
9. The etching method of claim 7 , wherein an execution time of the generating the plasma of the first processing gas is longer than that of the generating the plasma of the second processing gas.
10. The etching method of claim 7 , wherein a pressure inside the processing container and a power for generating plasma are maintained constant during each of the times of execution of the sequence.
11. The etching method of claim 1 , wherein the second processing gas contains the first processing gas and the halogen-containing gas.
12. The etching method of claim 1 , wherein an execution time of the generating the plasma of the first processing gas is longer than that of the generating the plasma of the second processing gas.
13. The etching method of claim 1 , wherein a pressure inside the processing container and a power for generating plasma are maintained constant during each of the times of execution of the sequence.
14. The etching method of claim 13 , wherein the second processing gas contains the first processing gas and the halogen-containing gas.
15. The etching method of claim 13 , wherein an execution time of the generating the plasma of the first processing gas is longer than that of the generating the plasma of the second processing gas.